At last year’s IEEE Applied Power Electronics Conference & Exposition (APEC), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) introduced the first - and only - ...
Tags: Transphorm GaN-on-Si, Electrical
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has acquired Nitronex LLC of Durham, NC, USA, which designs and makes ...
Tags: GaN technology, MACOM
Oxford Instruments is offering an upgrade option for its ALD equipment to apply a bias voltage to the substrate, adding further control of the energy at the wafer surface in order to tune the properties of the deposited film. While scaling ...
Nitronex LLC of Morrisville, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, broadband, and industrial markets, has launched the NPA1006, a 28V, 20MHz-1GHz, ...
Tags: Electrical, Electronics
silicon to play major role in LED production 13 Dec 2013 IHS predicts rapid transition to GaN-on-silicon LED manufacture for backlighting and some general lighting applications. Silicon switch In a dramatic change from the status ...
Tags: IHS, LED Production, LED
Researchers at Samsung Electronics and Seoul National University (SNU) in Korea have produced high-quality free-standing gallium nitride (GaN) substrates from hydride vapor phase epitaxy (HVPE) on silicon [Moonsang Lee et al, Appl. Phys. ...
Tags: GaN-on-silicon substrates GaN HVPE, Electrical, Electronics
The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the LED market is forecast to increase at a CAGR of 69% from 2013 to 2020, by which time they will account for 40% of all GaN LEDs manufactured, according to IHS. In ...
Tags: GaN-on-Silicon, LEDs
Plessey announced the availability of its next generation GaN-on-Silicon mid-power LEDs. The product family doubles the efficacy of Plessey's first generation MAGIC™ (Manufactured on GaN-on-Si I/C) products released in February 2013. ...
During the Strategies in Light Europe Investor Forum, TSMC discussed its phosphor-on-die approach to LEDs while Seoul Semiconductor discussed the market opportunity and homogenous substrate development. The Strategies in Light (SIL) ...
Tags: LED, SIL Europe, Strategies
Australian Cleantech company BluGlass Limited has today announced that it has increased its operational capacity with the successful commissioning of a former production MOCVD system at the Company’s Silverwater facility. Using a low ...
Tags: Bluegalss, MOCVD System
Bridgelux today announced the company has been named in the annual San Francisco Business Times 100 Fastest Growing Private Companies in the Bay Area list. The San Francisco Business Times recognizes private companies, and their ...
Tags: Bridgelux, GaN-on-Silicon
Azzurro has announced both production and lab milestones in wavelength variation using its GaN-on-Si LED template wafers and Air Water is working on a GaN-on-SiC-on-Si architecture with a new Aixtron MOCVD reactor. While the LED industry ...
Tags: LED Substrate Strategies, Lighting
Laser markets keep on an even keel 31 Jul 2013 Longbow Research finds vendors reporting no rude surprises, while fiber laser players continue to tussle. Materials processing The fortunes of US laser vendors during the second quarter of ...
Tags: Laser markets, Electrical, Electronics
Following declines of 45% in 2011 and 30% in 2013, LED wafer fab equipment spending will rise 17% to nearly $1.2bn in 2014 as the LED industry is working through its over-capacity problems and will renew capital spending and capacity ...
Tags: LED Equipment, LED, Electrical, Electronics
Saelig Company is now distributing samples of Plessey Semiconductors' GaN-on-Silicon MAGIC PLW111010 PLCC-2 SMT white light LEDs. These LEDs are claimed to be the first commercially available solid state illuminators manufactured on 6" ...