Integrated passive device maker OnChip Devices Inc of Santa Clara, CA, USA says that its wafer fabrication facility is offering backside metallization (BSM) of thin films for applications such as military, medical, and instrumentation. ...
Tags: Sputtering, HB-LEDs, GaN-on-Si, Wafer bonding
Vishay Intertechnology Inc of Malvern, PA, USA has introduced a new dual-color red and IR emitting diode designed to save space in wearable devices and medical patient monitoring systems. Offered in a compact 2mm x 2mm x 0.87mm package, ...
Tags: Vishay, Wearable devices, Medical patient monitoring systems.
Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...
Tags: Laser Diodes, Si Substrates
In booth 9-242 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremburg, Germany (10–12 May), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including ...
Tags: Power Module, Gate Driver
Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...
In hall 9, booth 316 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), Japan's Rohm Semiconductor is showcasing its latest power products for high-speed switching and high-power performance, while ...
Osram Opto Semiconductors GmbH of Regensburg, Germany has improved the luminous efficacy of its high-power light-emitting diodes (LEDs) by as much as 7.5% by reducing the unwanted effect of efficiency droop at high currents. This ...
Tags: Osram LED, Blue High-Power LEDs
HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...
Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) says that its new non-hermetic 25Gbit/s 1.3μm distributed feedback (DFB) laser diodes for 100Gb/s transceivers are now fully ...
Tags: Oclaro, Transceivers, components
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
Functional printing will be a big focus at global printing trade fair drupa in May. The European Specialist Printing Manufacturers Association will host a pavilion dedicated to functional and industrial printing, with member companies ...
Tags: Drupa 2016, Printing
Eulitha AG of Würenlingen, Switzerland (a spin-off of the Paul Scherrer Institute in Villigen that offers nano-lithographic equipment and services for photonics and optoelectronic applications) says that one of its PhableR 100 ...
Tags: Eulitha, Nanopatterning HB-LEDs
Matheson Tri-Gas Inc of Basking Ridge, NJ, USA, together with its parent company Taiyo Nippon Sanso Corp (TNSC) of Tokyo, Japan, says that the Solid State Lighting & Energy Electronics Center (SSLEEC) at the University of California, Santa ...
Tags: Matheson, Taiyo Nippon Sanso, MOCVD, UVC LEDs
Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) has announced qualification of its non-hermetic 25Gb/s 1.3μm distributed feedback (DFB) laser diodes for 100Gb/s transceivers. ...