Researchers in China and Turkey have been using varying-thickness gallium nitride (GaN) barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve hole distributions and thus to reduce efficiency droop effects ...
Tags: InGaN LEDs, Electrical, Electronics
Researchers in China have been developing nanopatterned-sapphire substrates (NPSS), achieved with nano-sphere lithography (NSL), as a basis for the production of superior aluminium gallium nitride (AlGaN) semiconductor material for deep ...
Tags: DUV LEDs, LED, Electrical, Electronics
Researchers in China have developed a silicon dioxide (SiO2) on aluminium oxide (Al2O3) passivation for nitride semiconductor light-emitting diodes (LEDs) that offers more than two orders of magnitude reduced current leakage under reverse ...
The US Naval Research Laboratory (NRL) in Washington DC has developed a method to grow epitaxial nitride semiconductors on graphene [Neeraj Nepal et al, Appl. Phys. Express, vol6, p061003, 2013]. The researchers hope that this could lead to ...
Tags: Graphene, Electrical, Electronics, hot-electron transistors
Northwestern University's Center for Quantum Devices has developed a suface-plasmon (SP) enhancement technique for ultraviolet (UV) light-emitting diodes (LEDs) produced on silicon substrates [Chu-Young Cho et al, Appl. Phys. Lett., vol102, ...
Tags: UV-LEDs, Electrical, Electronics
A transnational team of researchers has reported the first electrically pumped exciton-polariton laser device using an arsenide semiconductor microcavity [Christian Schneider et al, Nature, vol. 497, p348, 2013]. The team was variously ...
Tags: Electrical Pumping, Electrical, Electronics
Researchers in China have used strain engineering to improve the light output power of 530nm green light-emitting diodes (LEDs) by 28.9% at 150mA current injection [Hongjian Li et al, Appl. Phys. Express, vol6, p052102, 2013]. The research ...
Researchers at University of California, Santa Barbara (UCSB), in collaboration with colleagues at the Ecole Polytechnique in France, say they have conclusively identified Auger recombination as the mechanism that causes light emitting ...
Tags: Consumer Electronics, Electronics
Researchers at University of California, Santa Barbara, in collaboration with the école Polytechnique in Paris, France, say that they have identified Auger recombination as the mechanism that causes nitride light-emitting diodes ...
Tags: LED light, LED, light, Electronics
Taiwan National Tsing Hua University has been studying ways to improve the modulation performance of high-output-power nitride semiconductor light-emitting diodes (LEDs) [Chien-Lan Liao et al, IEEE Electron Device Letters, published online ...
Tags: GaN InGaN LEDs, LED, Electrical, Electronics, taiwan
Ohio State University (OSU) has used polarization engineering to create low-resistance tunnel junctions in gallium nitride (GaN)-based structures [Sriram Krishnamoorthy et al, Appl. Phys. Lett., vol102, p113503, 2013]. Such junctions could ...
Tags: GaN, InGaN, semiconductor
Researchers in Japan have been developing planarization techniques for gallium nitride (GaN) surfaces [Shun Sadakuni et al, Jpn. J. Appl. Phys., vol52, p036504, 2013]. The researchers from Osaka University, Ritsumeikan University and Ebara ...
A French Court ordered Peugeot Citroen to suspend proceeds of recombination a few days ago. Peugeot Citroen said that they will still cut 8,000 jobs by negotiating with labor union, but maybe delay the proceeds. January 28, Paris Appeal ...
Tags: French Court, Peugeot Citroen, recombination
Taiwan researchers have used a self-textured oxide mask (STOM) as a template to enhance the external quantum efficiency (EQE) of nitride 380nm ultraviolet (UV) light-emitting diodes (LEDs) by up to 83% [Kun-Ching Shen et al, IEEE Electron ...
Tags: LED light, LED, LED light extraction
In collaboration with Imperial College London in the UK and MicroLink Devices Inc of Niles, IL, USA, researchers in the US Naval Research Laboratory’s Electronics Technology and Science have proposed a novel triple-junction solar ...