Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) materials and related products and services, has announced the commercial availability ...
Tags: Electrical, Kyma Technologies
The US Naval Research Laboratory (NRL) in Washington DC has developed a method to grow epitaxial nitride semiconductors on graphene [Neeraj Nepal et al, Appl. Phys. Express, vol6, p061003, 2013]. The researchers hope that this could lead to ...
Tags: Graphene, Electrical, Electronics, hot-electron transistors
It is reported that Hong Kong University of Science and Technology (HKUST) has developed silicon substrate green and yellow nitride semiconductor LEDs. Details of the development were published in the May 29th issue of IEEE Electronic ...
Tags: HKUST, Lighting, Semiconductor, LED
Northwestern University's Center for Quantum Devices has developed a suface-plasmon (SP) enhancement technique for ultraviolet (UV) light-emitting diodes (LEDs) produced on silicon substrates [Chu-Young Cho et al, Appl. Phys. Lett., vol102, ...
Tags: UV-LEDs, Electrical, Electronics
Xidian University has developed a nitride semiconductor field-plated metal-insulator-semiconductor high-electron-mobility transistor (FP MIS-HEMT) with ‘negligible’ current collapse, along with high maximum current and enhanced ...
Tags: Silicon Nitride, Electrical
Crystal IS, which makes ultraviolet light-emitting diodes (UVC LEDs) grown pseudomorphically (strained) on aluminum nitride (AlN) substrates, has won the Disrupt-o-Meter Award at the 2013 BlueTech Forum in Amsterdam. Crystal IS was selected ...
Crystal IS Inc of Green Island, NY, USA, which makes ultraviolet light-emitting diodes (UVC LEDs) grown pseudomorphically (strained) on aluminum nitride (AlN) substrates, has won the Disrupt-o-Meter Award at the 2013 BlueTech Forum in ...
Tags: Crystal IS, Diode Laser System
German AlN crystal maker CrystAl-N is shifting its production from 1-inch to 2-inch AlN and accepting pre-orders of the new material. According to the company, which was founded in 2010 as spin-off of Friedrich-Alexander-University ...
Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer
AlN crystal maker CrystAl-N GmbH of Fürth, Germany says it is now moving from production of 1-inch to 2-inch AlN and accepting pre-orders. According to the firm, which was founded in 2010 as spin-off of Friedrich-Alexander-University ...
Tags: UV LEDs, Electrical, Electronics
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
Alien Technology, an industry leader in Radio Frequency Identification (RFID) Ultra High Frequency (UHF) products and services, introduced three new UHF Class 1 Gen 2 inlays that have been designed to uniquely address growing challenges ...
Rubicon has been granted its "Asymmetrical Wafer Configurations and Method for Creating the Same,” U.S. Patent No. 8,389,099 by the United States Patent and Trademark Office (USPTO). The patent covers the creation of visual and ...
Tags: LED, Patent, LED manufacturers
Working with the US Army Research Laboratory (ARL), Crystal IS Inc of Green Island, NY, USA, which makes ultraviolet light-emitting diodes (UVC LEDs) grown pseudomorphically (strained) on aluminum nitride (AlN) substrates, has achieved more ...
Short-wavelength UV LEDs with higher output are likely to be used increasingly in applications such as disinfecting water, sterilizing surfaces, and spectroscopy. Crystal IS, Inc., a manufacturer of ultraviolet LEDs for monitoring, ...
Tags: LEDs, lamp market, lamp