In 2010, the future of the Chinese LED market was looking brighter than ever. The world economy was recovering from the "Great Regression," new environmental and efficiency initiatives outlined in the country's twelfth five‐year plan ...
Tags: wafer
Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers. This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs ...
Tags: Wafer
Cree continues to lead the SiC materials marketplace in driving to larger diameters and this latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines. 150-mm epitaxial ...
Tags: Wafer
Cree Inc of Durham, NC, USA has announced the availability of high-quality, low-micropipe 150mm 4H n-type silicon carbide (SiC) epitaxial wafers, with highly uniform epitaxial layers as thick as 100 microns available for immediate purchase ...
Tags: SiC wafer
LEDs How it works A Light Emitting Diode (LED) is a semiconductor diode that emits light when an electric current is applied in the forward direction of the device. The effect is a form of electroluminescence where incoherent and ...
IBM is working with scientists at ETH Zurich to demonstrate the first-ever direct mapping of the formation of a persistent spin helix in a semiconductor.This has implications for the use of electron spins for storing,transporting and ...
Plastic electronics hold the promise of cheap, mass-produced devices. But plastic semiconductors have an important flaw: the electronic current is influenced by "charge traps" in the material. These traps, which have a negative impact on ...
Tags: Raw material
A common mechanism underlying charge traps in organic electronics has been discovered,leading to a theoretical framework for improved plastic electronics,OLEDs and organic solar cells. During their passage through semiconductors,a ...
Tags: Common, Electronics, theoretical
TRUMPF selects Aixtron AIX 2800G4-TM system for As/P-based high-power laser production Deposition equipment maker Aixtron SE of Herzogenrath,Germany says that TRUMPF Photonics Inc of Princeton,NJ,USA has taken delivery of an AIX 2800G4-TM ...
Tags: Aixtron, TRUMPF, As/P, High-power laser
'Artificial photosynthesis'turns water into hydrogen 06 Jun 2012 Researchers at Spain's Jaume I University develop semiconductor'leaf'that needs only sunlight to release hydrogen from water. Water good idea:UJI makes hydrogen ...
A new report estimates that the compound annual growth rate (CAGR) of polymer usage will increase by 26% in wafer level applications over the next 5 years. Last year, polymeric semiconductor material market was valued at $274 million, ...
Tags: Polymeric Materials, Polymer
11 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material
University of Warsaw, Poland, researchers will grow gallium nitride (GaN) materials on a new AIXTRON SE Close Coupled Showerhead (CCS) metal organic chemical vapor deposition (MOCVD) reactor in a 3 x 2” wafer configuration. It will be ...
Tags: mocvd
University of Warsaw, Poland, researchers will grow gallium nitride (GaN) materials on a new AIXTRON SE Close Coupled Showerhead (CCS) metal organic chemical vapor deposition (MOCVD) reactor in a 3 x 2” wafer configuration. It will be ...
Tags: Market View, mocvd
RWTH Aachen University and Aixtron SE in Germany have developed a new technique to create aluminium oxide insulated gates for nitride semiconductor transistors[Herwig Hahn et al,Semicond.Sci.Technol.,vol27,p062001,2012].The method consists ...
Tags: Plasma oxidation, RWTH Aachen University, Aixtron SE, GaN