A transnational team of researchers has reported the first electrically pumped exciton-polariton laser device using an arsenide semiconductor microcavity [Christian Schneider et al, Nature, vol. 497, p348, 2013]. The team was variously ...
Tags: Electrical Pumping, Electrical, Electronics
Sofradir of Paris, France, which makes infrared detectors for military, space and commercial applications, will make four presentations on advances in next-generation infrared detectors in different wavelengths from the visible to far ...
Tags: Sofradir, Generation IR Detection
The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling £1m to two universities – University College London (UCL) and Bristol – to support the development of compound ...
Tags: Solar Cells, Silicon Substrates
AIXTRON SE today announced that the University of Cambridge has successfully commissioned another multi-wafer Close Coupled Showerhead (CCS) MOCVD reactor at its new facility at the Department of Material Science and Metallurgy. The CCS ...
Tags: MOCVD Reactor, Gan-on-Si Wafers
Long-term collaboration for growth of 6-inch GaN-on-Si wafers planned AIXTRON SE today announced that the University of Cambridge has successfully commissioned another multi-wafer Close Coupled Showerhead (CCS) MOCVD reactor at its new ...
Tags: LED applications, LED
The Chinese government views the growth of the LED industry as a national security matter. As a result, it is driving a vast LED manufacturing effort and offering subsidies from central and local government agencies to help build its own ...
Tags: LED Industry, LED
Boeing Company says that its subsidiary Spectrolab Inc of Sylmar, CA, USA recently set a record of 37.8% for energy conversion efficiency in a ground-based solar cell without solar concentration (i.e. without the common practice of using ...
Tags: Spectrolab non-concentrator Solar Cell, Solar Cell, Electrical
The global semiconductor materials market decreased 2 percent in 2012 compared to 2011 while worldwide semiconductor revenues declined 3 percent. Revenues of $47.11 mark the first decline in the semiconductor materials market in three ...
Tags: Semiconductor, Semiconductor Materials, Electrical, Electronics
GT Advanced Technologies and Soitec , today announced a development agreement and a licensing agreement allowing GT to develop, manufacture and commercialize a high-volume, multi-wafer HVPE system to produce high-quality GaN epi layers on ...
Ohio State University (OSU) has used polarization engineering to create low-resistance tunnel junctions in gallium nitride (GaN)-based structures [Sriram Krishnamoorthy et al, Appl. Phys. Lett., vol102, p113503, 2013]. Such junctions could ...
Tags: GaN, InGaN, semiconductor
In booth 1127 at OFC/NFOEC 2013 in Anaheim, CA, USA (19-21 March), OneChip Photonics Inc of Ottawa, Canada, which designs optical chips and transceivers based on monolithic photonic integrated circuits (PICs) fabricated in indium phosphide ...
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has sold a SIVA 21 research system to the Institute of Automation and Control Processes (IACP), part of ...
A four-year contract to install LED lighting across the transport network in Paris will see work begin in April this year. RATP, the company that runs the transport network in Paris, France, has awarded multi-year contracts worth a total of ...
Tags: LED lighting, Philips, Step, Soitec
EV Group (EVG) of St Florian, Austria, a supplier of wafer bonding and lithography equipment for the MEMS (micro-electro-mechanical system), nanotechnology and semiconductor markets, says that it is developing equipment and process ...
Researchers in Spain have grown high-indium-content indium gallium nitride (InGaN) directly on silicon (Si) substrates [Praveen Kumar et al, Appl. Phys. Express, vol6, p035501, 2013]. The work was carried out at Universidad ...
Tags: InGaN, silicon, Optoelectronics, Microtechnology