Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that the University of Cambridge has commissioned another multi-wafer Aixtron Close Coupled Showerhead (CCS) MOCVD reactor at its new facility at the Department of Material ...
Tags: CCS MOCVD System, LED
Long-term collaboration for growth of 6-inch GaN-on-Si wafers planned AIXTRON SE today announced that the University of Cambridge has successfully commissioned another multi-wafer Close Coupled Showerhead (CCS) MOCVD reactor at its new ...
Tags: LED applications, LED
Plessey announced that samples of its GaN on silicon LED products are available. These entry level products are the first LEDs manufactured on 6-inch GaN on silicon substrates to be commercially available anywhere in the world. Plessey is ...
Tags: Plessey, GaN on Silicon, Lighting
These entry level products are the first LEDs manufactured on 6-inch GaN on silicon substrates to be commercially available anywhere in the world. Plessey is using its proprietary large diameter GaN on silicon process technology to ...
Tags: Silicon LEDs, LED, Lights, Lighting
Panasonic Corp of Osaka, Japan has developed a GaN-based power transistor with a blocking voltage of 600V that enables stable switching operations. Shipment of evaluation samples began in March. The firm claims that its design will for ...
Tags: Panasonic, GaN Power Transistor
Plessey today announced that samples of its Gallium Nitride (GaN) on silicon LED products are today available. These entry level products are the first LEDs manufactured on 6-inch GaN on silicon substrates to be commercially available ...
Tags: LED products, LED
Plessey Semiconductors Ltd of Plymouth, UK says that samples of its PLW111010 gallium nitride (GaN)-on-silicon LED products are now available. Picture: Plessey's new MAGIC GaN-on-Si LED product. The entry-level products are claimed ...
Panasonic Corp of Osaka, Japan has announced the development of a gallium nitride (GaN)-based power transistor with a blocking voltage of 600V that enables stable switching operations. Shipment of evaluation samples began in March. The ...
Tags: switching operations, GaN, power transistor
Veeco Instruments Inc. announced today that CEA-Leti, a research lab based in Grenoble, France, has selected Veeco’s TurboDisc K465i Metal Organic Chemical Vapor Deposition (MOCVD) system for its program with Aledia, its nanowire-LED ...
Tags: Veeco, Instruments, silicon wafer substrates
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride (GaN)-based RF power transistors for the defense, communications, broadband, and industrial & scientific markets, has named David W. Runton as its new VP of ...
The UK’s University of Cambridge has opened a new £1m facility for growing gallium nitride that aims to enable researchers to expand and accelerate their work, which promises to further reduce the cost and improve the efficiency ...
Tags: LED lights, LED, lights
Veeco Instruments Inc. (Nasdaq: VECO) announced today that CEA-Leti, a world-renowned research lab based in Grenoble, France, has selected Veeco’s TurboDisc® K465i Metal Organic Chemical Vapor Deposition (MOCVD) system for its ...
Gallium nitride has been described as “the most important semiconductor since silicon” and is used in energy-saving LED lighting. A new £1million (or US$1,530,700) growth facility will allow University of Cambridge ...
Tags: GaN LEDs, Electrical, lighting
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the research lab CEA-Leti in Grenoble, France, has selected Veeco’s TurboDisc K465i metal-organic chemical vapor deposition (MOCVD) ...
Tags: LED technology, LED, LEDs