The Chinese Academy of Sciences’ Research and Development Center for Semiconductor Lighting has been exploring the effect of p-type doping of the barriers in multiple quantum well blue-green (~500nm) light-emitting diode (LED) ...
Tags: Blue-Green LEDs, Electronics
Infinera Corp of Sunnyvale, CA, USA, a vertically integrated manufacturer of digital optical network systems incorporating its own indium phosphide-based photonic integrated circuits (PICs), has announced the ability to double capacity on a ...
Tags: Infinera InP PIC, Electrical, Electronics
The patent-pending LED creates a more precise wavelength of UV light than today's commercially available UV LEDs, and runs at much lower voltages and is more compact than other experimental methods for creating precise wavelength UV light. ...
Tags: Ultraviolet LED
Researchers at the Georgia Institute of Technology want to put your signature up in lights – tiny lights, that is. Using thousands of nanometer-scale wires, the researchers have developed a sensor device that converts mechanical ...
Tags: Piezo-Phototronic Effect
Researchers in China and Turkey have been using varying-thickness gallium nitride (GaN) barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve hole distributions and thus to reduce efficiency droop effects ...
Tags: InGaN LEDs, Electrical, Electronics
Peking University has found that using a pre-strain layer in nitride semiconductor epitaxial structures designed for blue laser diodes (LDs) can reduce the efficiency-sapping quantum-confined Stark effect (QCSE) [Cao Wen-Yu et al, Chin. ...
The Chinese Academy of Sciences’ Institute of Semiconductors and Tsinghua University claim “the first proof-of-concept experimental demonstration of the current-driven pyramid array InGaN/GaN core-shell LEDs interconnected with ...
Tags: Pyramid-array LEDs, Graphene Electrodes, GaN, MOCVD
Fiber-optic communications component and subsystem maker Finisar Corp of Sunnyvale, CA, USA and u2t Photonics AG of Berlin, Germany, which makes high-speed indium phosphide-based photodetectors and receivers as well as gallium ...
Tags: Fiber-optic communications, component, subsystem, Electrical, Electronics
LASER is the short form for "Light Amplification by Stimulated Emission of Radiation." The word radiation used in it does not refer to nuclear radiations rather it only constitute electromagnetic radiations. The electromagnetic spectrum ...
Tags: Processing Machinery, laser
u2t Photonics AG of Berlin, Germany, which makes high-speed indium phosphide-based photodetectors and receivers as well as gallium arsenide-based optical modulators, has unveiled what it claims is the fastest balanced photodetector offering ...
Tags: u2t photodetectors, Electrical, Electronics
Measure and reduce tempered glass iridescence We’re all familiar with the spots or streaks that show up on glass surfaces. This is especially true when there is a high degree of light polarization, with glass installations close to ...
There is now a way to differentiate between designer clothing and knockoffs. Chalmers researcher Christian Müller has produced a thread with unique optical properties, which can be used to create invisible patterns in fabrics that are ...
Researchers in China have used strain engineering to improve the light output power of 530nm green light-emitting diodes (LEDs) by 28.9% at 150mA current injection [Hongjian Li et al, Appl. Phys. Express, vol6, p052102, 2013]. The research ...
Infinera Corp of Sunnyvale, CA, USA, a vertically integrated manufacturer of digital optical network systems incorporating its own indium phosphide-based photonic integrated circuits (PICs), says that its DTN-X platform with ultra-long haul ...
Tags: Infinera, Subsea Network, Electrical
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD