University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...
Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE
The 9th Annual Meeting of the New Champions, a World Economic Forum conference hosted each year in China. It has come to be known as the “Summer Davos,” opened on Wednesday in the city of Dalian. It has become customary for the ...
Osram Opto Semiconductors GmbH of Regensburg, Germany has expanded its portfolio of optical sensors for the optical measurement of pulse rates and the oxygen saturation level of blood. Offering what is claimed to be excellent signal ...
Tags: Osram, Sensor, Fitness Tracking
Tokyo-based Mitsubishi Electric Corp is launching the ML562G84 638nm-wavelength red laser diode (LD), offering what is claimed to be record output power (under pulsed operation) of 2.5W for a 638nm projector light source. The record ...
Ford announced today the most powerful naturally aspirated road-going engine in its history. The all-new Ford 5.2-liter flat-plane crankshaft V8 will produce 526 horsepower and 429 lb.-ft. of torque in Shelby GT350 Mustang and Shelby GT350R ...
In a talk and a tutorial at CLEO 2015 (Conference on Lasers and Electro-Optics) in San Jose, CA, USA (10-15 May), a team led by Paul Crump from FBH (Ferdinand-Braun-Institut, Leibniz-Institut fur Hoechstfrequenztechnik) of Berlin, Germany ...
Tags: Diode lasers, FBH
Small and medium-sized enterprises (SME) continue to face a myriad of challenges in the current business environment, and this is unlikely to change in the near future. Disruptive technologies and innovation are accelerating the need for ...
Osram Opto Semiconductors GmbH of Regensburg, Germany SFH 7051 has launched an integrated optical sensor that consumes very little power (maximizing battery life and reliability), designed especially for heart rate monitoring in fitness ...
Tags: Osram, Wearables Sensor
SNEC 2015 Scientific Conference boasts an extraordinary International Scientific Committee. The Conference is chaired by Prof Armin ABERLE, CEO of the Solar Energy Research Institute of Singapore (SERIS). Prof Joachim LUTHER from ...
Tags: Footprints
Vishay adds high-speed 940nm IR emitters in leaded and SMD packages with radiant intensity up to 600mW/sr Vishay Intertechnology Inc of Malvern, PA, USA has broadened its optoelectronics portfolio by launching high-speed 940nm infrared ...
Tags: IR Emitters, SMD Packages
University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...
Tags: Indium, InGaN substrates, Electrical
To provide an easy-to-use way for power systems designers to evaluate the performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which ...
Tags: EPC, FETs, Electronics
OSI Laser Diode Inc (LDI) of Edison, NJ, USA (an OSI Systems Company) has launched the SCW 1632-350R high-power pulsed laser diode module for optical testing applications. Housed in a 14-pin butterfly package, the ridge waveguide (RWG) ...
Skysilicon Co Ltd of Chong Qing City, China (which makes discrete power devices and power ICs, MEMS sensors and compound semiconductor devices) has released what is reckoned to be China's first gallium nitride (GaN) power device ...
Tags: GaN-on-Si MISHEMTs, Electronics
ROHM of Kyoto, Japan says that its SCT2080KE silicon carbide (SiC) MOSFET has been adopted in the new SiC-Pulser Series of ultra-high-voltage pulse generators launched by Japan's Fukushima SiC Applied Engineering Inc. Picture: ...
Tags: Pulse Generators, Generators