Researchers at Korea's Chonbuk National University and Korea Institute of Science and Technology have improved the contact of graphene with p-type gallium nitride (p-GaN), resulting in improved near-ultraviolet (NUV) light-emitting diodes ...
Tags: Near-ultraviolet LEDs, Graphene GaN MOCVD, Gallium Nitride
New advanced materials like MOFs (metal organic frameworks), advanced high-strength steel, and carbon nanotubes have the potential to enable novel products and disrupt existing businesses. However, material commercialization timelines are ...
Tags: Construction, Decoration
Researchers at the National University of Singapore (NUS) have developed an exfoliation method for the two-dimensional (2D) material molybdenum disulfide that leads to crystals of the substance becoming high quality monolayer flakes. These ...
China is leading the world in the mass production of graphene films used in production of cell phone and computer touch screens as a new production line began operation on Wednesday. The production line is in a graphene industrial park in ...
Tags: Graphene Production, Cell Phone
Prime Minister Donald Tusk on Wednesday officially launched the production of graphene in Poland. "We have managed to combine the power of invention, the financial acumen of private business and state aid to produce this historic ...
Tags: graphene, metallurgy
Despite graphene's many impressive properties, its lack of a bandgap limits its use in electronic applications. In a new study, scientists have theoretically shown that a bandgap can be opened in graphene by folding 2D graphene sheets ...
Tags: Graphene, Electrical, Electronics
Posted in Medical Materials - Raw Materials by Chris Newmarker on November 26, 2013 Engineers concerned about global health think there’s room for improvement when it comes to condoms. They want to create condoms that more people ...
Graphene on silicon carbide (SiC) has been shown to give an accurate resistance standard and to outperform the presently used gallium arsenide (GaAs) devices in many aspects. Now, researchers at the Centre for Metrology and Accreditation of ...
Tags: Electrical, Electronics
Buoyed by the success of its Compact 21 range of research systems, at the recent North American Molecular Beam Epitaxy Conference (NAMBE 2013) in Banff, Canada (5-11 October) Riber S.A. of Bezons, France launched the Compact 21 DZ 3"-wafer ...
Tags: Riber MBE, Electrical, Electronics
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK’s University of Nottingham has purchased two GENxplor R&D molecular beam epitaxy (MBE) systems for its School of Physics and ...
Tags: Optoelectronic, Electronics
Veeco Instruments announced that the University of Nottingham, United Kingdom, purchased two GENxplor™ R&D Molecular Beam Epitaxy (MBE) Systems for its School of Physics and Astronomy. The systems will enable the growth of high ...
Tags: MBE Systems, Lighting
In a European collaboration within the project ConceptGraphene, researchers at Chalmers University of Technology in Sweden have developed a method for fast and inexpensive quality control of graphene grown on silicon carbide (SiC). The ...
Tags: Graphensic, Electrical, Electronics
On August 15, AIXTRON SE announced that the University of Cincinnati (UC), USA, has ordered a new BM system to further develop its longstanding research into carbon nanotubes (CNT). The system set up for handling 4-inch substrates has been ...
Tags: Nanotube Development, AIXTRON
The Chinese Academy of Sciences’ Institute of Semiconductors and Tsinghua University claim “the first proof-of-concept experimental demonstration of the current-driven pyramid array InGaN/GaN core-shell LEDs interconnected with ...
Tags: Pyramid-array LEDs, Graphene Electrodes, GaN, MOCVD
The US Naval Research Laboratory (NRL) in Washington DC has developed a method to grow epitaxial nitride semiconductors on graphene [Neeraj Nepal et al, Appl. Phys. Express, vol6, p061003, 2013]. The researchers hope that this could lead to ...
Tags: Graphene, Electrical, Electronics, hot-electron transistors