In the course of time there has been a constant change from IMT (Insert Mount Technology), i.e. the classical insertion mounting on PC boards to SMT (Surface Mount Technology), the surface mounting of the components on the PC board. ...
Tags: Heat Sinks, Industrial Equipment, Components
Freescale Semiconductor of Austin, TX, USA, which provides RF power technology for cellular markets, has announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet ...
Tags: Freescale, Electrical
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, broadband and industrial & scientific markets, has developed a family of products ...
Avago Technologies Ltd of San Jose, CA, USA and Singapore, a supplier of analog interface components for wireless, wireline and industrial applications, has announced two RF power amplifiers (PAs), the MGA-43728 and MGA-43828, and a WiFi ...
Tags: Small-Cell Base, Electrical
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has introduced a new style of RF power amplifier (PA) optimized to power 3G and 4G small-cell base-stations. Paired with digital or ...
Tags: Anadigics, Electrical, Electronics
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, cable TV and industrial & scientific markets, has fully qualified its NPT1015 ...
Tags: RF Power Transistor, Nitronex
Freescale Semiconductor of Austin, TX, USA, which provides RF power technology for cellular markets, has launched a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) control circuit specifically designed to optimize the ...
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes – to be displayed in ...
Tags: TriQuint, Electrical, Electronics
Freescale Semiconductor of Austin, TX, USA, which provides RF power technology for cellular markets, has introduced an enhancement-mode pseudomorphic high-electron-mobility transistor (pHEMT) low-noise amplifier (LNA) based on GaAs process ...
Mesuro Ltd of Pencoed Technology Park, UK, a spin-off from Cardiff University’s Centre for High Frequency Engineering, has announced the capability for its RF measurement services to deliver whatever measurements are needed for ...
Tags: Non-Linear Devices, Mesuro
Plasma process equipment maker Plasma-Therm LLC of St Petersburg, FL, USA says that a leading US wireless compound semiconductor device manufacturer has placed follow-on orders for Plasma-Therm VERSALINE wafer processing, etch modules. The ...
Tags: Plasma, Electronics
At the 14th annual IEEE Wireless and Microwave Technology Conference (WAMICON 2013) in Orlando, FL (7-9 April), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA launched three ...
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride (GaN)-based RF power transistors for the defense, communications, broadband, and industrial & scientific markets, has named David W. Runton as its new VP of ...
Much has been said about the integration of PXI products with LXI and VXI to create hybrid test systems, but less has been said about combining PXI and USB products in a test system, writes David Owen from Pickering Interfaces. USB is a ...
Tags: Computer Products, USB products
The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a French team of researchers [A. Soltani ...