Researchers at University of Notre Dame and Kopin Corp have developed high-performance nitride semiconductor high-electron-mobility transistors (HEMTs) with indium gallium nitride (InGaN) channels [Ronghua Wang et al, Appl. Phys. Express, ...
Tags: semiconductor, high electron mobility transistors, InGaN
Researchers in Singapore claim the first DC and microwave performance measurements for 0.15μm-gate aluminium gallium nitride(AlGaN)on gallium nitride high-electron-mobility transistors(HEMTs)on silicon substrates with gold-free ...
Sophia University in Tokyo, Japan, has used nanocolumns of nitride semiconductor to produce different emission color LEDs in a single growth process for what is claimed to be the first time [Katsumi Kishino et al, Appl. Phys. Express, vol6, ...
Tags: Sophia University, LEDs, Sapphire substrates, LEd lighting
Yale University has developed techniques to release nitride semiconductor layers and transfer them to other substrates, allowing vertical current-flow light-emitting diodes (LEDs) [Yu Zhang et al, Appl. Phys. Lett., vol100, p181908, 2012]. ...
Light output power increased 23% over conventional lateral LEDs. Korea's universities have used aluminum-alloyed graphite as a thermally conducting substrate to improve the light output power performance of nitride semiconductor LEDs by ...
Tags: LED
University of California,Santa Barbara(UCSB)has demonstrated for the first time nonpolar m-plane(10-10)nitride semiconductor vertical-cavity surface-emitting laser(VCSEL)diodes[Casey Holder et al,Appl.Phys.Express,vol5,p092104,2012]. The ...
Tags: nitride semiconducto, VCSEL, electrical
Chinese analyst firm, Research in China, warns the nation's LED industry may not live up to expectations LED manufacturers saw substantial price declines in 2011, and can expect much of the same until 2014, reports China-based business ...
Tags: LED
Researchers in China have developed a low-cost, high-throughput photonic crystal (PhC) process for nitride semiconductor light-emitting diodes (LEDs) [Tongbo Wei et al, Appl. Phys. Lett., vol101, p211111, 2012]. The process used ...
Tags: Nanospheres GaN LEDs MOCVD, LEDs
Deposition equipment maker Aixtron SE of Herzogenrath, Germany has received its first purchase order for a Close Coupled Showerhead (CCS) CRIUS MOCVD system from Dynax Semiconductor Inc of China. Aixtron says it will be the first system in ...
Tags: Aixtron, MOCVD, GaN electronic device, semiconductor, epitaxial layers
Dynax Semiconductor Inc. of China has placed its first purchase order for an AIXTRON Close Coupled Showerhead (CCS) CRIUS MOCVD system aimed at production of nitride semiconductor electronic devices. It will be the first system in China ...
Researchers from Japan and the USA have reported the first fabrication on hydride vapor phase epitaxy (HVPE) aluminium nitride (AlN) substrates of aluminium gallium nitride (AlGaN) light-emitting diodes (LEDs) that emit at the ...
Tags: DUV, LEDs, AlGaN, AlN substrates, HVPE, light-emitting diodes
Researchers in Korea have developed gold-doped graphene as a transparent and current-spreading electrode (TCSE) for ultraviolet (UV) light-emitting diodes (LEDs). Some of the research group from Chonbuk National University and ...
Tags: UV LED
National Chung Hsing University in Taiwan has developed a simple silane treatment to improve crystal quality/internal quantum efficiency (IQE) and light extraction in nitride semiconductor light-emitting diodes (LEDs) [Chung-Chieh Yang et ...
Tags: LED
Researchers in China have improved LED power output and droop behavior in nitride semiconductor light-emitting diodes (LEDs) by including an electron-emitting layer under the active region [Jianbao Zhang et al, Appl. Phys. Express, vol5, ...
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in Q3/2012 the Suzhou Institute of Nano-tech and Nano-bionics (SINANO), China, ordered two Aixtron Close Coupled Showerhead (CCS), metal organic chemical vapour ...