Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...
Specialty foundry TowerJazz (which has fabrication plants at Tower Semiconductor Ltd in Migdal Haemek, Israel, and at its subsidiaries Jazz Semiconductor Inc in Newport Beach, CA, USA and TowerJazz Japan Ltd) has announced its SiGe Terabit ...
Tags: TowerJazz RF CMOS SiGe
The Centre for Process Innovation is looking to position the UK as a world leader in the field of packaging that uses NFC tech. Hasbro has joined the Centre for Process Innovation's three year project to boost the adoption of packaging ...
Tags: Hasbro, smart Packaging
The Semiconductor's business unit of Raytheon UK in Glenrothes, Scotland (a subsidiary of Raytheon Company of Waltham, MA, USA) and Newcastle University's School of Electrical and Electronic Engineering have collaborated to produce silicon ...
Tags: Raytheon, Newcastle University, Sic-Based Analog Circuitry
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE42723, an RF switch with what is claimed ...
Tags: Peregrine, SOI, RF switches
NeoPhotonics Corp of San Jose, CA, USA (a vertically integrated designer and manufacturer of hybrid photonic integrated optoelectronic modules and subsystems for high-speed communications networks) has announced initial sample availability ...
Tags: NeoPhotonics, PICs
Nanoelec Research Technological Institute (IRT) in Grenoble, France - an R&D consortium headed by CEA-Leti focused on information and communication technologies (ICT) using micro- and nanoelectronics - has announced the first co-integration ...
Tags: III-Vs-on-Si, Direct wafer bonding
Navitas Semiconductor Inc of El Segundo, CA, USA has launched its first products, which are claimed to be the industry's first gallium nitride (GaN) power ICs. Navitas was founded in 2013, and in 2014 investment firm MalibuIQ licensed the ...
Tags: GaN, Power electronics
Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) has announced its line-up of fiber-optic transceivers designed to drive the data-center transition from 40Gb/s to 100Gb/s and ...
Tags: Oclaro, Transition, OFC
Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) has now qualified and released to production both its 2km CWDM4 QSFP28 and 10km LR4 QSFP28 client-side transceivers designed for ...
EFFECT Photonics b.v. – a spin off from the Technical University of Eindhoven (TU/e) in The Netherlands that develops optical components using indium phosphide (InP)-based multi-channel photonic integrated circuits (PICs) for mobile ...
Polestar introduces a whole new line of high-performance products in the form of Polestar Performance Parts, offering even more driving pleasure to Volvo drivers. Polestar Performance Parts offers a wide range of extensively developed ...
In booth #3101 at the Optical Fiber Communication Conference & Exposition (OFC 2016) in Anaheim, CA, USA (22-24 March), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog ...
Tags: M/A-COM, photonic applications
Future radar imaging systems and 5G communication systems will generate improved resolution and provide higher data-transmission rates when operated at higher frequencies, but at the cost of increased power consumption. To reduce power ...