The US government has given approval for Raytheon Company of Waltham, MA, USA to export a gallium nitride- (GaN)-based Active Electronically Scanned Array (AESA) Patriot sensor to Patriot Air and Missile Defense System partner nations. ...
Tags: Patriot Radar, AESA Sensor
Researchers in Korea have used spin-coated silver nanowires (Ag NWs) to improve the performance of indium gallium nitride light-emitting diodes (InGaN LEDs) [Gyu-Jae Jeong et al, Appl. Phys. Lett., vol106, p031118, 2015]. The team based at ...
Tags: Spin-Coating, InGaN LEDs
Qorvo Inc, a provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, has reported December-quarter financial results for both RF Micro Devices Inc of Greensboro, NC, USA and TriQuint ...
Tags: core technologies, solutions, Electrical
GaN Systems Inc of Ottawa, Ontario, Canada has signed an agreement for Ecomal Europe to promote and distribute its gallium nitride (GaN)-based high-power switching transistors. GaN Systems' gallium nitride power transistors are based on ...
Tags: GaN Systems, high-power switching transistors, Electrical
Daniel Feezell, an assistant professor in the University of New Mexico’s Department of Electrical and Computer Engineering, has received a $500,000 US National Science Foundation (NSF) Faculty Early Career Development (CAREER) award, ...
Tags: gallium nitride, Electrical
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has received over $1m of orders for its redundant/phase 250W/500W Extended Ku-Band SapphireBlu gallium nitride (GaN)-based ...
API Technologies Corp. (NASDAQ: ATNY) (“API” or the “Company”), a leading provider of high performance RF, microwave, millimeterwave, power, and security solutions, has won Product of the Year honors for its QBS-609 ...
SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has announced metal-organic chemical vapour deposition (MOCVD) demonstration ...
Tags: metal-organic chemical, GaN-550 MOCVD system, Electrical
Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...
Tags: Cubic Silicon Carbide, Electrical
Following its Manufacturing Advanced Functional Materials (MAFuMa) call issued in February, the UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded £20m to 10 new research projects that aim to advance the ...
Tags: Functional Materials, Electronics
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has released a new Application Note for design engineers that sets ...
Tags: Gan Systems, E-Mode Power, Switching Transistors, Electrical
Advantech Wireless of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched a 2.5kW TROPO C-band modular gallium nitride (GaN)-based solid-state power amplifier (SSPA). The new Model ARMA-CL2500A ...
Modelithics Inc of Tampa, FL, USA, which provides RF and microwave active and passive simulation models for electronic design automation (EDA), has released the latest update to the growing library of high-accuracy non-linear simulation ...
Tags: Modelithics, RF, GaN
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has signed an agreement for Japanese company Daito Electron Co Ltd ...
Tags: GaN Systems, Daito Electron, Electrical
NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Tags: Boron Nitride, GaN Transistors