Kim Kisslinger, seen here with a focused-ion beam instrument, reduced the InGaN samples to a thickness of just 20 nanometers to prepare them for electron microscopy. From the high-resolution glow of flat screen televisions to light bulbs ...
Tags: Atomic-Scale, LED
Funded by the US Army Research Office, researchers at North Carolina State University ( at the atomic scale (just one atom thick). The technique can be used to create the thin films on a large scale, sufficient to coat wafers that are ...
Tags: NCSU, Atomic-Layer Thin-Film
Takara Bio's subsidiary Clontech Laboratories has released the SMARTer Universal Low Input RNA Kit for sequencing. The kit, which extends the company's next generation sequencing (NGS) solutions, includes low input samples of compromised ...
Tags: Clontech Labs, RNA Kit
Recent progress in the engineering of plasmonic structures has enabled new kinds of nanometer-scale optoelectronic devices as well as high-resolution optical sensing. But until now, there has been a lack of tools for measuring ...
Tags: Electrical, Electronics
AIXTRON SE today announced that the University of Cambridge has successfully commissioned another multi-wafer Close Coupled Showerhead (CCS) MOCVD reactor at its new facility at the Department of Material Science and Metallurgy. The CCS ...
Tags: MOCVD Reactor, Gan-on-Si Wafers
Long-term collaboration for growth of 6-inch GaN-on-Si wafers planned AIXTRON SE today announced that the University of Cambridge has successfully commissioned another multi-wafer Close Coupled Showerhead (CCS) MOCVD reactor at its new ...
Tags: LED applications, LED
Ultrapure water is crucial for many functions in cell culture applications and having a reliable source available is essential. Filtration+Separation describes work undertaken at Sartorius to test the suitability of such an ultrapure water ...
Tags: Ultrapure Water, Water
Gwangju Institute of Science and Technology and Samsung Electronics Co Ltd of South Korea have developed a zinc oxide (ZnO) nanorod (NR) process for improving light extraction from gallium nitride (GaN) light-emitting diodes (LEDs) by up to ...
Tags: GaN, LEDs, Electronics
Researchers in South Korea have developed a new gold-doping process for graphene transparent conducting layers (TCLs) that improves its adhesion and electrical contact with near-ultraviolet light-emitting diodes (NUV-LEDs) [Chu-Young Cho et ...
Tags: NUV-LEDs GaN Graphene, Electrical, Electronics, LED
The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a French team of researchers [A. Soltani ...
The New York Society of Cosmetic Chemists (SCC) honoured scientists from Evonik’s Personal Care Business Line with the Shaw Mudge Award for best paper presented at SCC‘s annual scientific meeting and technology showcase. ...
Tags: Evonik, emulsifiers, cosmetic emulsions
South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...
Tags: Diode, semiconductor device, semiconductor
South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...
Tags: Diode, semiconductor device, semiconductor
Researchers in Japan and Switzerland have used a laser treatment of sapphire substrates to increase the thickness of gallium nitride (GaN) layers grown by hydride vapor phase epitaxy (HVPE) to around 200μm [Hideo Aida et al, Appl. Phys. ...
The UK manufacturing and sales divisions of Carl Zeiss have cemented their roots in Cambridge with an expansion of their existing production site and the construction of new application laboratories, sales and service offices and customer ...
Tags: electron microscope, Electrical, Electronics