Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has made available the EPC9004 development board, featuring the firm’s enhancement-mode gallium nitride on silicon (eGaN) field-effect transistors (FETs) for power ...
Tags: EPC, Power Systems, eGaN FETs
Researchers in the USA have developed radio frequency switches based on nitride semiconductor voltage-controlled capacitors (varactors) [F. Jahan et al, IEEE Electron Device Letters, 9 January 2013]. The team, consisting of engineers from ...
Tags: radio frequency switches, nitride semiconductor voltage, SET
Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
An international research team has been exploring the role of gate oxide border traps in devices being developed for future electronics.The researchers presented their results at the 2012 International Electron Devices Meeting[D.Lin et ...
Tags: international research team, role of gate oxide border traps
Researchers in the USA have achieved record transconductance and cut-off frequencies for indium gallium arsenide (InGaAs) channel metal-oxide field effect transistors (MOSFETs) [D.-H. Kim et al, Appl. Phys. Lett., vol101, p223507, 2012]. ...
OPEL Technologies Inc of Toronto, Ontario, Canada says that its US affiliate OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT has produced an integrated laser device, achieving a key milestone in its Planar Optoelectronic Technology ...
Tags: OPEL, ODIS, POET, integrated laser device, VCL
Singapore researchers have developed high-mobility III-V indium gallium arsenide (InGaAs) channel n-type metal-oxide-semiconductor field-effect transistors (n-MOSFET) on germanium-on-insulator (GeOI) substrates [Ivana et al, Appl. Phys. ...
Tags: n-MOSFETs, metal-oxide-semiconductor, semiconductor, transistors
University of Glasgow and UniversitéParis researchers have demonstrated for the first time RF performance of 50nm gate-length diamond field-effect transistors(FETs)[Stephen A.O.Russell et al,IEEE Electron Device Letters,published ...
Tags: Diamond, Element Six, Electrical
New 12W and 25W LED driver ICs from iWatt work with triac and electronic dimmers and achieve power factor in excess of 0.95. IWatt has introduced two new dimmable solid-state lighting (SSL) driver ...
Tags: LED driver IC
4 September 2012 Osaka university orders Aixtron BM Pro system Deposition equipment maker Aixtron SE of Herzogenrath,Germany has announced that in Q3/2012 Japan's Osaka University ordered an Aixtron BM Pro system,capable of handling ...
Tags: Osaka university, BM Pro system, Aixtron SE
3 September 2012 EPC releases safe operating area data for its eGaN FETs Efficient Power Conversion Corp(EPC)of El Segundo,CA,USA,which makes enhancement-mode gallium nitride on silicon(eGaN)power field-effect transistors(FETs)used in ...
Dongguan Tianyu Semiconductor Technology Co Ltd,which claims to be the first manufacturer of silicon carbide(SiC)epitaxial wafers in China,has started to expand its SiC epiwafer business globally after the completion of three contracts in ...
All American extends distribution agreement with GeneSiC Electronic component distributor All American Semiconductor has signed extended its distribution agreement with GeneSiC Semiconductor Inc of Dulles,VA,USA,which develops silicon ...
Tags: GeneSiC SiC, Distribution, Agreement
Researchers at Hokkaido University and Japan Science and Technology Agency—PRESTO have reported surrounding-gate transistors (SGTs) using compound semiconductor core–multishell (CMS) nanowire (NW) channels on silicon that ...
Tags: Nanowire, transistors, PRESTO
EPC launches WiTricity demo system featuring high-frequency eGaN FETs Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) ...
Tags: EPC E-mode GaN FETs, Lights, Lighting