AIXTRON SE today announced that the Suzhou Institute of Nano-tech and Nano-bionics (SINANO), China, has made a purchase order for two AIXTRON Close Coupled Showerhead (CCS) systems to extend the center's nitride semiconductor research. The ...
Singapore researchers report "for the first time" the DC and microwave characteristics of submicron-gate aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on 8-inch (200mm) diameter Si(111) ...
Tags: MOCVD
Researchers in Korea and India have used zinc oxide (ZnO) nanorods on the rear side tolight-emitting diodes (LEDs) grown on c-plane sapphire [Joo Jin et al, Jpn. J. Appl. Phys., vol51, p102101, 2012]. The researchers were based at Chonbuk ...
Tags: LED
Rensselaer Polytechnic Institute (RPI) and Samsung Electronics have used tapered micro-pillars of titanium dioxide (TiO2) to increase light extraction from nitride semiconductor light-emitting diodes (LEDs) by up to 100% [Ming Ma et al, ...
Tags: LEDs
18 October 2012 Lithium aluminate substrate for low-cost nonpolar gallium nitride Researchers based in Germany and the Netherlands have been studying the potential for growing nonpolar gallium nitride(GaN)on lithium ...
Singapore’s Nanyang Technological University has made a first demonstration of nitride semiconductor high electron mobility transistors (HEMT) grown on silicon substrates using ammonia molecular beam epitaxy (MBE) rather than the ...
Tags: Singapore, Technological University, electron mobility transistors
Kyma Technologies has tapped into the market for GaN crystal growth equipment. The firm's GaN crystal growth system is based on the hydride vapour phase epitaxy(HVPE)growth process which is a proven high growth rate approach for producing ...
Tags: Kyma Technologies, GaN, crystal growth equipment, HVPE
Taiwan researchers have achieved a reduction in luminous efficiency droop from 42%to 7%by inserting p-type indium gallium nitride(p-InGaN)between the active light-emitting and electron-blocking layers of a nitride semiconductor ...
Canadian firm Meaglow has made a breakthrough on a low temperature Migration Enhanced Afterglow film growth technique to produce a thick InGaN layer with strong yellow emission, for increasing the efficiency and lowering production costs of ...
Meaglow Ltd of Thunder Bay, Ontario, Canada – a privately held firm that produces a range of epitaxy equipment and MBE and MOCVD accessories, as well as providing specialized thin films to research institutes and industry - says that ...
Tags: MOCVD
Triangular quantum well injection boosts nitride LED efficiency by 80% The State Key Laboratory of Optoelectronic Materials and Technology of Sun Yat-sen University has reduced the forward voltages and increased the device efficiency of ...
Tags: LED
Researchers in Switzerland and the USA have reported the first large-signal performance for a gallium nitride on silicon(GaN-on-Si)high-electron-mobility transistors with output power density of 2W/mm and associated peak power-added ...
Tags: GaN/Si, HEMTs, high-electron-mobility transistors, frequency performance
Reducing noise at high frequency in nitride-on-silicon transistors France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has produced the first benchmark for low-noise gallium nitride on silicon transistors in ...
Tags: GaN/Si HEMTs MOCVD IEMN, Lights, Lighting, nitride-on-silicon transistors
Researchers in Korea have been studying how to improve graphene transparent conducting layers(TCLs)using gold nanoparticle(Au-NP)decoration.The team was variously associated with Gwangju Institute of Science and Technology,Korea Basic ...
Silicon nitride protection for graphene electrodes in UV-LEDs Korea University, US Naval Research Laboratory and University of Florida have improved the reliability of graphene electrodes in ultraviolet light-emitting diodes (UV-LEDs) ...