Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has introduced the Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) system, which incorporates single-wafer ...
Advantech Wireless of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched the 2500-G Series 100W Ku-band gallium nitride (GaN)-based airborne-grade SSPB/BUC (solid-state power block ...
Tags: RF equipment, microwave systems, Electrical
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is exhibiting at the Electronica 2014 trade fair in Munich, Germany ...
Tags: GaN Systems, semiconductors
For third-quarter 2014, RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has reported record revenue of $272.1m, up 18% on $230.8m last quarter and up 8% on $250.8m a year ago. This ...
Japan’s National Institute of Advanced Industrial Science and Technology (NAIST) has claimed the highest breakdown voltage to date for a diamond metal-semiconductor field-effect transistor (MESFET) [Hitoshi Umezawa et al, IEEE ...
Advantech Wireless of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has increased its production capacity of gallium nitride (GaN)-based solid-state power amplifiers (SSPAs) and block up-converters ...
Tags: Advantech Wireless, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC9118, a fully ...
Tags: Buck Converter, Demo Board
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the publication of the ...
RF Micro Devices Inc of Greensboro, NC, USA has unveiled 11 new amplifiers, of which six are gallium nitride (GaN)-based products to support the requirements of the new data over cable service interface specification (DOCSIS) 3.1. RFMD is ...
Tags: RFMD, 3.1 Cable Networking, Electronics
In booth 419 at the IEEE Energy Conversion Congress & Expo (ECCE 2014) in Pittsburgh, PA, USA (14–18 September), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching ...
Based on its recent analysis of the gallium nitride (GaN)-based devices market, Frost & Sullivan has recognized Advantech Wireless of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) with the 2014 North ...
Tags: Wireless'GaN Devices, Electronics
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has signed an exclusive worldwide distribution agreement with ...
Tags: GaN Systems, Power electronics
Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...
Tags: GaN, HEMTs, Electronics
Deposition equipment maker Aixtron SE of Aachen, Germany says that Mitsubishi Electric Corp (MELCO) of Tokyo, Japan has begun operations with an AIX 2800G4 HT Planetary Reactor system. The 11x4”-wafer configuration metal-organic ...
Tags: Mitsubishi, GaN-on-Si, power amplifiers
Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and provides gallium nitride (GaN)-based power conversion devices and modules for power supplies and adapters, motor drives, solar inverters and electric vehicles, is ...
Tags: Transphorm, Partner, Electrical