Comtech Telecommunications Corp says that its subsidiary Comtech PST Corp in Melville, NY, USA is introducing the model BMC858109-600 gallium nitride (GaN) power amplifier for X-band radar applications. The AB linear design operates over ...
Tags: Microwave Amplifier, Electrical, Electronics
, Inc., yesterday announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree's extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN ...
Tags: Cree GaN HEMT, Lights, Lighting
Cree Inc of Durham, NC, USA has signed a non-exclusive worldwide patent license agreement with Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) that provides access to ...
Tags: Transphorm Cree, Electrical, Electronics
Broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has introduced a family of CATV infrastructure products that is optimized for the proposed data over cable service interface specification ...
Tags: Anadigics, Electrical, Electronics
Fujitsu Semiconductor Ltd of Yokohama, Japan has released the MB51T008A, a silicon-substrate-based, gallium-nitride (GaN) power device with a drain-source breakdown voltage (V(BR)DSS) of 150V. Features of the MB51T008A include: (1) ...
Tags: Power Device, Electrical
The Electronic Packaging business unit of SCHOTT technology group of Mainz, Germany and Tesat-Spacecom GmbH of Backnang, Germany (a manufacturer of systems and equipment for telecoms via satellite) have developed a hermetically sealed ...
Tags: power amplifier, Electrical, Electronics, Satellite
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA says that RF-Lambda of San Diego, CA, USA, which makes and distributes RF components for analog wireless networks in North America, ...
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has launched the ACA2429 gallium nitride (GaN) power doubler surface-mount IC supporting operation up to 1.2GHz. Samples are ...
The UK Government’s Chief Secretary to the Treasury, Danny Alexander, has announced a £2m boost for research into the development of gallium nitride (GaN) power semiconductors by Netherlands-based electronics firm NXP ...
Tags: NXP, Power Semiconductors
The Queensland Micro and Nanotechnology Facility (QMF) of Griffith University in Brisbane, Australia and its industry partner, plasma etch, deposition and thermal processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK, have ...
Tags: Silicon, Micro and Nanotechnology
LayTec AG of Berlin, Germany (which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications) says that, in his invited talk at the LED Technology Forum in Singapore (7-10 ...
Tags: LayTec, Singapore's IMRE
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power management applications, has redesigned its website to include ...
Tags: EPC, Electrical, Electronics
Xilinx Inc of San Jose, CA, USA, which provides all-programmable field-programmable gate arrays (FPGAs), systems-on-chip (SoCs) and 3D ICs, and Japan's Sumitomo Electric Industries Ltd are collaborating to reduce capital expenditure (CapEx) ...
Tags: SEI, Electrical, Electronics
LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...
Tags: SiC, substrates GaN