Singapore researchers have developed high-mobility III-V indium gallium arsenide (InGaAs) channel n-type metal-oxide-semiconductor field-effect transistors (n-MOSFET) on germanium-on-insulator (GeOI) substrates [Ivana et al, Appl. Phys. ...
Tags: n-MOSFETs, metal-oxide-semiconductor, semiconductor, transistors
Due to the global economic downturn,demand for LED lighting has been weakening.Meanwhile,efficiency and price-performance ratio have been increasing,and the penetration rate of the LED lighting market is expected to continue rising.Market ...
Tags: global economic downturn, LED lighting, brightness efficiency
At this year’s China SSL Conference , AIXTRON again has hosted an MOCVD seminar along with the China Solid State Lighting Alliance (CSA). More than 200 decision-makers from industry and research took part in AIXTRON’s ...
Tags: MOCVD
The release of GAN-on-silicon LED chips in China presents a lower-cost alternative that is comparable in quality to mainstream products based on sapphire and SiC substrates. R&D work leveraging the advantages of silicon substrates has ...
Tags: led chip
Soraa Inc of Fremont,CA,USA,which develops solid-state lighting technology built on'GaN on GaN'(gallium nitride on gallium nitride)substrates,says that as of 1 November 2012 its full-spectrum GaN-on-GaN LED MR16 lamps ,China,South ...
Tags: LED MR16 lamp, GaN on GaN substrates, USA, Soraa Inc.
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in Q3/2012 the Suzhou Institute of Nano-tech and Nano-bionics (SINANO), China, ordered two Aixtron Close Coupled Showerhead (CCS), metal organic chemical vapour ...
AIXTRON SE today announced that the Suzhou Institute of Nano-tech and Nano-bionics (SINANO), China, has made a purchase order for two AIXTRON Close Coupled Showerhead (CCS) systems to extend the center's nitride semiconductor research. The ...
Singapore researchers report "for the first time" the DC and microwave characteristics of submicron-gate aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on 8-inch (200mm) diameter Si(111) ...
Tags: MOCVD
Gallium nitride on silicon (GaN-on-Si)-based LEDs have been fabricated using high‐brightness LED structures of Epistar Corp of Taipei, Taiwan and the patented technology for 150mm GaN-on-Si substrates of Azzurro Semiconductors AG of ...
Tags: GaN-on-Si
UK-based Plessey Semiconductors Ltd has been shortlisted in the Electronics Product Category of the British Engineering Excellence Awards 2012,for its new MAGIC(MAnufactured on Gan ICs)High Brightness LED(HB-LED)products.The winners will be ...
Tags: China, British Engineering Excellence Award, HB-LED products
AZZURRO Semiconductors AG of Dresden,Germany,which makes gallium nitride(GaN)epitaxial wafers based on large-area silicon substrates,has released a white paper that describes the easy migration of LED manufacturing to GaN-on-Si.Using its ...
Tags: AZZURRO, GaN-on-Si LEDs, Dresden, DTF, Taipei
Singapore’s Nanyang Technological University has made a first demonstration of nitride semiconductor high electron mobility transistors (HEMT) grown on silicon substrates using ammonia molecular beam epitaxy (MBE) rather than the ...
Tags: Singapore, Technological University, electron mobility transistors
4 September 2012 Wafer-scale transfer of III-Vs to silicon preparing for low-cost manufacturing Researchers based in the Republic of Ireland,Northern Ireland and the USA have developed a wafer-scale method to integrate III-V devices with ...
Tags: Wafer-scale transfer, electronics industry, low-cost manufacturing, laser
Light source manufacturer Ushio Inc of Tokyo, Japan says that in November it will begin sales of Superline LEDs, a series of LED MR16 halogen replacement lamps from Soraa Inc of Fremont, CA, USA, which develops solid-state lighting ...
Tags: GaN
Researchers in Switzerland and the USA have reported the first large-signal performance for a gallium nitride on silicon(GaN-on-Si)high-electron-mobility transistors with output power density of 2W/mm and associated peak power-added ...
Tags: GaN/Si, HEMTs, high-electron-mobility transistors, frequency performance