Cree, Inc. announces the release of its second-generation SiC MOSFET, enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These new 1200-V MOSFETs deliver industry-leading power density ...
Tags: SiC MOSFET, silicon-based solutions, silicon
Cree Inc of Durham, NC, USA has released its second generation SiC MOSFET. According to the firm, the new 1200V MOSFETs deliver leading power density and switching efficiency at half the cost per amp of Cree’s previous generation ...
Tags: Cree, SiC MOSFET, solar circuits
Cree, Inc. announces the release of its second generation SiC MOSFET, enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These new 1200V MOSFETs deliver power density and switching ...
Tags: Cree, Volume Production, power applications
Richardson RFPD Inc (an Arrow Electronics Company) of LaFox, IL, USA has launched a new website resource focused on silicon carbide (SiC) technology for energy and power applications. Several Richardson RFPD suppliers are driving ...
Tags: Richardson RFPD, SiC technology, semiconductor devices
At the SIL conference, Atmel announced a driver IC family designed specifically for high-CRI lamps and luminaires that use a mix of phosphor-converted white LEDs and red or amber LEDs that combined deliver good light quality and high ...
Tags: Atmel, LED Driver ICs, High-CRI Color-Mix SSL Applications
Following six years of R&D, Raytheon has opened a silicon carbide fab in Glenrothes Scotland which will offer foundry services as well as its own line of high-temperature ICs. Its SiC process has been developed on-site, with Government ...
Tags: Raytheon, silicon carbide fab, IC
A non-dimmable, single-stage architecture seeks to minimize the bill of materials for LED A-lamps, thereby opening the market to greater SSL adoption. Power IC specialist iWatt has introduced a single-stage LED driver IC that is ...
Tags: LED A-lamps, SSL adoption, lighting
Microchip has introduced a digitally-controlled analogue DC-DC converter chip for power converters between 50 and 150W, including high current point-of-load converters. Called MCP19111, both microprocessor and analogue blocks are on the ...
Fuji Electric is planning to launch its new Quick Charging Stations for electric vehicles (EV) in North America in February 2013, which are claimed to suit variety of applications and site locations. The UL certified 25kW DC charger ...
Tags: Fuji Electric, Quick Charging Stations, EV
Renesas Electronics has introduced low on-state resistance mosfets which are optimised for use as ORing FETs in power supplies. The on-state resistance is 0.72mΩ (typical value) for 30V. This is about 50% lower resistance ...
Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA has announced that co-founder Eric Lidow passed away on 18 January. Born in Vilnius, Lithuania (then part of Russia) over 100 years ago in 1912, ...
Tags: Power semiconductor device, Eric Lidow, Electrical, Electronics Engineers
Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
Electrical test instrument and system provider Keithley Instruments Inc of Cleveland, OH, USA has introduced seven instrumentation, software, and test fixture configurations for parametric curve tracing applications for characterizing high ...
Researchers in the USA have achieved record transconductance and cut-off frequencies for indium gallium arsenide (InGaAs) channel metal-oxide field effect transistors (MOSFETs) [D.-H. Kim et al, Appl. Phys. Lett., vol101, p223507, 2012]. ...