DBR articles & resources on Made-in-China.com

Flip Chip Opto Launches 100W and 200W UV-A COB LEDs

Aug 23, 2016

LED lighting technology firm Flip Chip Opto Inc of Fremont, CA, USA has launched its Ares Series UV-A spectrum flip chip COB (chip-on-board) LED module as part of the firm's standard product line up. The Ares Series is based on patented ...

Tags: Flip Chip Opto Inc, Ares Series UV-A, DBR

LayTec Receives First Order for Epitt/Vcsel

Jun 30, 2016

In-situ metrology system maker LayTec AG of Berlin, Germany says that, following the request of customers and utilizing the modular concept of its new Gen3 in-situ platform, it has customized and expanded the related in-situ metrology ...

Tags: LayTec, Metrology, MOCVD

Enhancing The Efficiency of White LEDs Via Reflection

Apr 21, 2016

Chien-Chung Lin, Huang-Yu Lin, Kuo-Ju Chen, Sheng-Wen Wang, Kuan-Yu Wang, Jie-Ru Li, Huang-Ming Chen and Hao-Chung Kuo The use of distributed Bragg reflectors in remote-phosphor white-LED packaging significantly improves luminous ...

Tags: White LED Packaging

Oclaro Featuring a 25% Reduction in Size and 1 Watt Lower Power Consumption

Mar 24, 2015

Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) is sampling a new dual micro-ITLA (integrable tunable laser assembly) featuring a 25% reduction in size and 1 Watt lower power ...

Tags: Oclaro, networks, Electronics

Researchers Develops a Monolithic Room-Temperature THz Source Based on QCLs

Dec 12, 2014

Northwestern University’s Center for Quantum Devices in USA has developed a monolithic room-temperature terahertz (THz) source based on quantum cascade lasers (QCLs) [Q. Y. Lu et al, Appl. Phys. Lett., vol105, p201102, 2014]. The ...

Tags: tunable THz source, THz spectroscopy, Electrical

UCSB Used PEC to Create 405nm-Wavelength Vertical-Cavity Surface-Emitting Lasers

Aug 20, 2014

University of California, Santa Barbara (UCSB) has used photo-electro-chemical etch (PEC) to create 405nm-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [C. ...

Raytheon Company Has Been Awarded a $6m Study and Demonstration Contract

Jun 6, 2014

Raytheon Company of Waltham, MA, USA has been awarded a $6m study and demonstration contract by the US Office of Naval Research (ONR) to further develop an enterprise air surveillance radar (EASR) powered by gallium nitride (GaN) ...

Tags: Raytheon Radar, Modular Radar System

ETH Zürich and Philips Technologie GmbH Have Developed 981nm-Wavelength

Apr 10, 2014

ETH Zürich and Philips Technologie GmbH have developed 981nm-wavelength passively mode-locked electrically pumped vertical-external-cavity surface-emitting lasers (EP-VECSELs) with “the shortest pulses (2.5ps), highest average ...

Tags: EP-VECSELs InGaAs GaAs

Sun Yat-sen University in China has improved the wall-plug efficiency

Mar 31, 2014

Sun Yat-sen University in China has improved the wall-plug efficiency of indium gallium nitride (InGaN) light-emitting diodes (LEDs) grown on silicon by incorporating a distributed Bragg reflector (DBR) [Yibin Yang et al, Appl. Phys. ...

Tags: InGaN LEDs, Silicon, semiconductor

Oclaro Has Announced The Continuing Expansion of Its 100G Product

Sep 24, 2013

Oclaro Inc of San Jose, CA, USA, which provides lasers and optical components, modules and subsystems for the optical communications, industrial, and consumer laser markets, has announced the continuing expansion of its 100G product ...

Tags: Oclaro, Electrical, Electronics

The Team Was Variously Based at University

May 29, 2013

A transnational team of researchers has reported the first electrically pumped exciton-polariton laser device using an arsenide semiconductor microcavity [Christian Schneider et al, Nature, vol. 497, p348, 2013]. The team was variously ...

Tags: Electrical Pumping, Electrical, Electronics

Researchers Have Developed an ALD Technique to Create DBR

Feb 17, 2013

Researchers in China have developed an atomic layer deposition (ALD) technique to create distributed Bragg reflectors (DBR) for increasing nitride semiconductor light-emitting diode (LED) output power by up to 43% [Hongjun Chen et al, Appl. ...

Tags: DBR ALD MOCVD LEDs GaN, Lighting, LED

Dbr Declares Major Consumer Goods Survey

Feb 4, 2013

To understand what our readers view as the most important business issues for 2013-2014, DBR is launching a major industry survey covering all its readers worldwide. We are looking to find out how readers perceive business issues going ...

Tags: DBR, consumer goods, Food industry

Beck's Has Introduced Beck's Sapphire in The US

Jan 5, 2013

Germany-based Beck's has introduced Beck's Sapphire, a golden pilsner brewed with German Saphir aroma hops in the US. The 6% ABV comes in sleek black glass bottle, according to the company. Anheuser-Busch US marketing vice president ...

Tags: Beck's, pilsner, Saphir, food industry

The VCSEL Structure Is Attractive Based on Its Generally Lower Threshold Current

Dec 20, 2012

University of California,Santa Barbara(UCSB)has demonstrated for the first time nonpolar m-plane(10-10)nitride semiconductor vertical-cavity surface-emitting laser(VCSEL)diodes[Casey Holder et al,Appl.Phys.Express,vol5,p092104,2012]. The ...

Tags: nitride semiconducto, VCSEL, electrical

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