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DHBT
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Sanan IC Extends III-V Foundry From Greater China to North American, European and APAC Markets
Aug 27, 2018Sanan Integrated Circuit Co Ltd (Sanan IC) of Xiamen City, Fujian province (China’s first 6-inch pure-play compound semiconductor wafer foundry) has announced its entry into the North American, European and Asia Pacific (APAC) markets ...
Tags: integrated passive device, filters
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Researchers Achieved a Record D-Band Wireless Communication Signal Transmission Speeds
Mar 6, 2015Teledyne Scientific & Imaging and test instrument maker Teledyne LeCroy of of Chestnut Ridge, NY, USA (a subsidiary of Teledyne Technologies Inc) say that researchers at the Microwave Electronics Lab at Chalmers University of Technology in ...
Tags: Wireless Transmission, Electronics
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ETH-Zurich Has Reported Increased Maximum Oscillation Frequency
Aug 9, 2013ETH-Zurich has reported increased maximum oscillation frequency for its indium phosphide/gallium arsenide antimonide (InP/GaAsSb) double-heterostructure bipolar transistors (DHBTs) [Rickard L?vblom et al, IEEE Electron Device Letters, ...
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Zurich Has Been Exploring The Use of Teflon AF as an Interlayer
Jul 13, 2012The Millimeter-Wave Electronics Group of the Swiss Federal Institute of Technology(ETH)Zurich has been exploring the use of Teflon amorphous fluoropolymer(AF)as an interlayer dielectric for III-V double heterostructure bipolar ...
Tags: Teflon, transistor, AF, DHBT
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