EQE articles & resources on Made-in-China.com

Reducing Misfit Dislocations in Green Semi-Polar Light-Emitting Diodes

Aug 26, 2016

University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...

Tags: LAE, GaN, LEDs

Silicon Dioxide Charge Inverter Boosts Hole Injection in IngaN LEDs

Apr 21, 2016

Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...

Tags: InGaN LEDs InGaN Silicon dioxide MOCVD

Demonstration of Novel High-Efficiency Blue LEDs on Silicon Substrates

Apr 6, 2016

Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...

Tags: High-Efficiency Blue LEDs

Indium Gallium Nitride Barriers Enhance LED Power And Efficiency

Mar 15, 2016

South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...

Tags: LEDs, MQW, barriers, InGaN, MOCVD

Tantalum Barrier Reduces Gallium Phosphide Contact Resistance

Mar 9, 2016

Korea University has been working to improve metal contacts on aluminium gallium indium phosphide (AlGaInP) light-emitting diodes (LEDs) [Dae-Hyun Kim et al, Jpn. J. Appl. Phys., vol55, p032102, 2016]. In particular, the research team added ...

Tags: AlGalnP, Tantalum barrier, LED

Hybrid Growth of Gallium Nitride Tunnel Junctions

Feb 14, 2016

University of California Santa Barbara (UCSB) in the USA has been developing a hybrid technique to create III-nitride tunnel junctions (TJs) using a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy ...

Tags: Gallium Nitride Tunnel, Hybrid

Ultraviolet Photodetectors on Free-Standing Gallium Nitride

Dec 2, 2015

Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...

Tags: AlGaN, Ultraviolet photodetectors, HVPE

Gallium Nitride Phosphide Absorber for Silicon-Based Solar Power

Oct 30, 2015

Researchers in the USA have been working on gallium nitride phosphide (GaNP) as an absorbing material for solar power [S. Sukrittanon et al, Appl. Phys. Lett., vol107, p153901, 2015]. The aim of the team from University of California San ...

Tags: Gallium Nitride Phosphide, Solar Power, solar cells

KTH-Royal Institute Create Heterojunctions Consisting of N-InP and P-Type Silicon

Jun 16, 2015

KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...

Tags: corrugated epitaxial, silicon

Deep Ultraviolet Light-Emitting Diodes

Apr 28, 2015

Researchers in Korea and USA have developed sidewall emission-enhanced (SEE) deep ultraviolet (DUV) light-emitting diodes (LEDs) to improve light extraction efficiency DUV LEDs with wavelengths less than 300nm become very inefficient due ...

Tags: Light-Emitting Diodes, LEDs

265nm-Wavelength LEDs Is More Powerful and Efficient

Apr 22, 2015

Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...

Tags: DUV LEDs, DUV devices

UCLA Developed Gallium Antimonide Thermophotovoltaic Cells

Apr 7, 2015

University of California Los Angeles (UCLA) has developed gallium antimonide (GaSb) thermophotovoltaic (TPV) cells on gallium arsenide (GaAs) substrates [Bor-Chau Juang et al, Appl. Phys. Lett., vol106, p111101, 2015]. The use of GaAs ...

Tags: TPV devices, lattice mismatch, Electronics

Zhejiang University Jointly Developed UV-LEDs Based on Schottky Junctions

Mar 5, 2015

Zhejiang University in China and University of Cambridge in the UK have jointly developed ultraviolet light-emitting diodes (UV-LEDs) based on metal-semiconductor Schottky junctions between silver nanowires (AgNWs) and gallium nitride (GaN) ...

Tags: Schottky UV-LEDs, medical diagnostics

SETi Doubles Efficiency and Ships Samples

Feb 11, 2015

Sensor Electronic Technology Inc (SETi) of Columbia, SC, USA, which develops and manufactures deep-ultraviolet (DUV) LED devices and modules, has started shipping samples of its UVC LEDs with 2.5mW of optical power at 265–280nm. First ...

Tags: UVC LEDs, Sensor Electronic

Spin-Coating of Silver Nanowires as Transparent Electrode for InGaN LEDs

Feb 10, 2015

Researchers in Korea have used spin-coated silver nanowires (Ag NWs) to improve the performance of indium gallium nitride light-emitting diodes (InGaN LEDs) [Gyu-Jae Jeong et al, Appl. Phys. Lett., vol106, p031118, 2015]. The team based at ...

Tags: Spin-Coating, InGaN LEDs

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