The US Missile Defense Agency has awarded Raytheon Company of Waltham, MA, USA a contract modification to develop a transition to production process to incorporate gallium nitride (GaN) components into existing and future AN/TPY-2 radars. ...
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE45361 monolithic 100W power limiter. The ...
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE42525 and PE426525, which are claimed to ...
The global power amplifier market will increase at a compound annual growth rate (CAGR) of nearly 14% from 2016-2020, according to a report from Technavio that provides an analysis of the most important trends expected to impact the market. ...
Tags: power amplifier, CAGR
SAGE SatCom of San Diego, CA, USA (part of telecoms solutions provider REMEC Broadband Wireless), which manufactures power amplifiers for the satellite industry, has added an ultra-compact, efficient, low-power-consumption gallium nitride ...
Tags: SAGE SatCom, GaN, BUC
China-based Hanergy Thin Film Power Group Ltd and the Huangpi District People's Government in Wuhan City have entered into an investment cooperation agreement to construct a gallium arsenide (GaAs) thin-film solar cell R&D and manufacturing ...
Tags: Solar Cells, gallium arsenide
SAGE SatCom of San Diego, CA, USA (part of telecoms solutions provider REMEC Broadband Wireless), which provides compact Ka-band block up-converter (BUC) and transceiver solutions, is now shipping its high-power 20 watt linear Ka-band BUC ...
Tags: GaN, M&C, Electronics
Revenue for gallium nitride (GaN) RF devices in both military and commercial applications will grow at a compound average annual growth rate (CAAGR) of more than 20% to nearly $560m in 2019, according to the Strategy Analytics Advanced ...
Tags: GaN RF Device, GaN RF Market
At the EDI CON 2014 Electronic Design Innovations Conference in Beijing (8-10 April), Peregrine Semiconductor Corp of San Diego, CA, USA, a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-sapphire (SOS) ...
Tags: Peregrine CMOS SOI, Electrical, Electronics
Soitec of Bernin, France, which makes engineered substrates including silicon-on-insulator (SOI) wafers and III-V epiwafers, and Intelligent Epitaxy Technology Inc (IntelliEPI) of Richardson, TX, USA, which uses molecular beam epitaxy (MBE) ...
Tags: IntelliEpi, Soitec, engineered substrates, GaAs
M/A-COM Technology Solutions Inc of Lowell, MA, USA, which makes semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications, has agreed to acquire Mindspeed Technologies Inc of Newport Beach, CA, USA ...
Tags: M/A-COM Mindspeed, Electrical, Electronics
At the Society of Cable Telecommunications Engineers (SCTE) Cable-Tec Expo 2013 in Atlanta (22-24 October), broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA launched the ACA1240 CATV Edge QAM ...
Tags: Anadigics, Qam Amplifier
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has launched the ACA2429 gallium nitride (GaN) power doubler surface-mount IC supporting operation up to 1.2GHz. Samples are ...
Researchers in China have designed and constructed a two-stage 2.5-5GHz low-noise amplifier(LNA)using enhancement-mode(normally-off)aluminium gallium arsenide(AlGaAs)pseudomorphic high-electron-mobility transistors(pHEMTs)[Peng Yangyang et ...
Tags: LNA AlGaAs AlGaAs pHEMT
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA,is showcasing twelve new products at European Microwave Week in Amsterdam next week(29-31 October).These include new packaged ...