The US Defense Advanced Research Projects Agency (DARPA) says that missions in remote, forward operating locations often suffer from a lack of connectivity to tactical operation centers and access to valuable intelligence, surveillance and ...
Tags: GaN E-band MMICs, vehicles, Electrical, Electronics
New advancements in LED technology have allowed for it once more to step up its game. The Smart Lighting Engineering Research Center of Rensselaer Polytechnic Institute?recently announced that they have successfully created "the first ...
Tags: LED, Lights, Lighting, Smart Lighting
GaN LEDs set to top 100 billion units 25 Jun 2013 Shipments of the blue-emitting chips will reach new milestone this year, reports analyst company IHS. Analysts at the market forecasting company IMS Research (part of IHS) are expecting ...
The Smart Lighting Engineering Research Center at Rensselaer Polytechnic Institute (RPI) has demonstrated the first monolithic integration of LED and high electron mobility transistor (HEMT) on the same gallium nitride (GaN) chip. It is ...
Tags: Smart Lighting, Lights, Lighting, LED Lighting
The Smart Lighting Engineering Research Center at Rensselaer Polytechnic Institute (RPI) in Troy, NY, USA has demonstrated what is reckoned to be the first monolithically integrated light-emitting diode (LED) and high-electron-mobility ...
Tags: Smart Lighting, GaN Chip
White LED with high light efficiency, long life, energy saving, environmental protection and other significant advantages of green lighting and information display has broad application prospects in the field. At present, the core material ...
Tags: LED material, LED phosphor
In booth 1625 at the IEEE MTT-S International Microwave Symposium(IMS 2012)in Montreal,Canada(19-21 June),StratEdge of San Diego,CA,USA(which designs and produces packages for microwave,millimeter-wave,and high-speed digital devices)is ...
Tags: StratEdge, CMC, Circuit Board
Researchers in China have used a combination of surface texturing and vertical-stand mounting to increase light output from nitride semiconductor LEDs by up to 118.5%[T.B.Wei et al,IEEE Electron Device Letters,published online 7 May ...
Tags: LEDs, VLED, GaN, GaN substrate, MOCVD