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GaN Diodes
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Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate
Apr 29, 2016Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
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Panasonic Develops GaN Diodes with High-Current Operations and Low Turn-on Voltage
Oct 12, 2015Panasonic Corp of Osaka, Japan says that it has developed gallium nitride (GaN) diodes that can not only operate at a high current of 7.6kA/cm2 - four times greater than that tolerated by conventional silicon carbide (SiC) diodes with a ...
Tags: Panasonic, GaN Diodes
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Silicon Carbide Chip Business Was Worth More Than $133m
Aug 4, 2015According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...
Tags: SiC Market, power electronics
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Researchers in USA Develops Vertical Schottky and Pn GaN Diodes on Silicon
Jul 27, 2015Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...
Tags: electronics, semiconductor
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Researchers Claimed Record High Breakdown Voltage for Aluminium Gallium Nitride
Mar 26, 2015Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...
Tags: silicon diodes, GaN substrates
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MIT Has Demonstrated GaN Vertical Schottky and P-N Diodes
May 7, 2014Massachusetts Institute of Technology (MIT) has demonstrated gallium nitride (GaN) vertical Schottky and p-n diodes on silicon Si substrates “for the first time” [Yuhao Zhang et al, IEEE Electron Device Letters, published online ...
Tags: GaN, MOCVD, Gallium Nitride Diodes
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GaN and SiC Power Semiconductors Is Forecast to Grow a Factor of 18
Apr 27, 2013The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...
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SiC and GaN are Forecast to Grow a Remarkable Factor of 18 Over 10 Years
Apr 26, 2013Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...
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Transphorm Has Launched The Total GaN Family of Gallium Nitride on Silicon Transistors
Mar 18, 2013Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) has launched the Total GaN family of gallium nitride on silicon transistors and diodes, establishing what is claimed to ...
Tags: Transphorm, power devices, GaN device
