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GaN HEMTs
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Wolfspeed Extends 50V GaN Hemt Family to High-Efficiency 3.0GHz 250W
Aug 28, 2017Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...
Tags: Wolfspeed, silicon carbide
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Mitsubishi Electric Expanding Ku-Band GaN HEMT Range to 70W and 100W to Shrink Satellite Earth Stations
Sep 29, 2016Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) to include models operating at frequencies of 13.75–14.5GHz with saturated output power of 100W (50.0dBm) ...
Tags: Mitsubishi Electric, GaN HEMTs
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Hybrid III-Nitride and Silicon Carbide High-Voltage Power Transistors
Jun 21, 2016Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
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Mitsubishi Electric Expanding Lineup of 3.5GHz GaN HEMTs for 4G Base Transceiver Stations
Dec 24, 2015Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) for use in base transceiver stations (BTS) operating in the 3.5GHz band of fourth generation (4G) mobile ...
Tags: Mitsubishi Electric, GaN HEMT, Electronics
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Mitsubishi Uses Laytec in-Situ Monitoring to Grow Crack-Free GaN-on-Si HEMTs
Dec 3, 2015The main challenge of growing gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) on silicon substrates is the lattice mismatch between GaN and AlGaN that causes a high tensile stress and often leads to cracks. Now, by ...
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Reducing Current Leakage in Aluminium Gallium Nitride Transistors on Silicon
Nov 27, 2015Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
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Wolfspeed Launches 50V Plastic-Packaged GaN HEMTs for LTE & Radar
Oct 15, 2015Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...
Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices
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Wolfspeed Exhibiting GaN HEMTs for Radar Applications at EuMW
Sep 15, 2015In booth #240 at European Microwave Week (EuMW) 2015 in Paris, France (6–11 September), Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors ...
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Forward-Bias Gate Breakdown in HEMTs with Enhancement-Mode P-Gan Gate
Sep 14, 2015Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
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High-Performance Gallium Nitride on Low-Resistance Silicon
Aug 31, 2015University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...
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Researchers in China and Hong Kong Have Claimed The Highest Output Power Density
Jul 13, 2015Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
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Cree Launched Two GaN HEMT RF Devices
May 18, 2015Cree Inc of Durham, NC, USA has launched two gallium nitride (GaN) high-electron-mobility transistor (HEMT) RF devices that are said to solve a number of long-standing issues for radar systems employing traditional travelling wave tube ...
Tags: GaN HEMTs, TWT Amplifiers
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ON Semiconductor Showcases GaN HEMT-based Two-stage Converter at PCIM
Apr 24, 2015At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), ON Semiconductor of Phoenix, AZ, USA (which supplies silicon-based power and signal management, logic, discrete and custom devices for ...
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Mitsubishi Electric Developed a Gallium Nitride High-Electron-Mobility Transistor
Mar 16, 2015Tokyo-based Mitsubishi Electric Corp has developed a gallium nitride high-electron-mobility transistor (GaN HEMT) offering high output power and efficiency for use in base transceiver stations (BTS) operating in the 3.5GHz band for ...
Tags: Mitsubishi Electric, GaN HEMT
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CREE Introduced a 25W GaN MMIC for 6-12GHz Performance
Mar 16, 2015Cree Inc of Durham, NC, USA has introduced a 25W gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) for 6–12GHz performance. Leveraging the inherent benefits of GaN technology, the new MMIC enables extremely wide ...
Tags: integrated circuit, GaN technology
