- Location
GaN Wafer
"-
Lasertec Launches GALOIS GaN Wafer Inspection and Review System
Dec 7, 2017Metrology and inspection equipment maker Lasertec Corp of Tokyo, Japan has launched the GALOIS defect inspection and review system series, designed specifically for the inspection and analysis of gallium nitride (GaN) wafers. The firm is ...
Tags: Metrology, inspection equipment
-
LayTec Details Accurate Wafer Temperature Measurement During GaN-on-Si MOCVD For Power Electronics
Mar 9, 2016Temperature measurement during metal-organic chemical vapor deposition (MOCVD) growth of GaN-on-silicon (GaN/Si) devices is challenging, notes in-situ metrology system maker LayTec AG of Berlin, Germany. Theoretically, conventional infrared ...
Tags: MOCVD, GaN devices
-
GaN Power Devices Market to Grow at 24.5% to $2.6bn in 2022
Feb 29, 2016The global gallium nitride (GaN) power device market will rise at a compound annual growth rate (CAGR) of 24.5% from 2016 to $2.6bn in 2022, according to the report 'GaN Power Devices Market - Global Forecast to 2022' from ...
Tags: GaN power devices
-
San'an IC Selects Mentor Graphics' Calibre Platform for Verification of GaAs Wireless ICs
Dec 2, 2015Electronic hardware and software design solutions provider Mentor Graphics Corp of Wilsonville, OR, USA says that Xiamen San'an Integrated Circuit Co Ltd (San'an IC) of Xiamen Torch High-tech Industrial Development Zone, China has selected ...
Tags: San'an, Mentor Graphics, GaAs
-
SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics
Oct 19, 2015When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
-
ILT of Aachen Develops an Analysis Technology For GaN
Nov 17, 2014The Fraunhofer Institute for Laser Technology ILT of Aachen, Germany has worked with RWTH Aachen University’s Institute of Physics (IA) to develop an analysis technology that, for the first time it is claimed, allows the structural ...
Tags: LED light, Laser system
-
Epistar to Have Over 400 MOCVD Reactors, More Than Double of Its Competitor
Jul 10, 2014Following the announcement on June 30 that Epistar is acquiring Formosa Epitaxy (FOREPI), Epistar will have over 400 MOCVD reactors including those from FOREPI's China subsidiaries, more than double the GaN MOCVD of its nearest competitor, ...
-
RF Plans to Transfer and Produce GaN
Mar 26, 2014RF Micro Devices Inc of Greensboro, NC, USA has signed a $9.7m agreement with the Manufacturing and Industrial Technologies Directorate within the US Air Force Research Laboratory (AFRL) to transfer and produce a 0.14μm gallium nitride ...
Tags: RF Micro Devices, GaN technology
-
RF Micro Devices Introduced What It Claims Are The World's First 6-Inch GaN-on-SiC Wafers
Sep 19, 2013RF Micro Devices Inc of Greensboro, NC, USA has introduced what it claims are the world's first 6-inch gallium nitride on silicon carbide (GaN-on-SiC) wafers for manufacturing RF power transistors for both military and commercial use. The ...
-
Researchers Have Been Developing Planarization Techniques for GaN Surfaces
Mar 20, 2013Researchers in Japan have been developing planarization techniques for gallium nitride (GaN) surfaces [Shun Sadakuni et al, Jpn. J. Appl. Phys., vol52, p036504, 2013]. The researchers from Osaka University, Ritsumeikan University and Ebara ...
-
This Deal Extends The Strategic Alliance Between The Two Companies Dating
Feb 25, 2013Two semiconductor materials companies, France-based Soitec and Japan’s Sumitomo Electric Industries, Ltd., have signed a licensing and technology-transfer agreement under which Sumitomo Electric will use Soitec’s proprietary ...
Tags: LED lighting, LED, lighting
-
The Introduction of Nichia
Feb 22, 2013Nichia Corporation is a Japanese chemical engineering and manufacturing company, headquartered in Tokushima, Japan with global subsidiaries, that specializes in the manufacturing and distribution of phosphors, including light-emitting ...
-
NGK Insulators Has Announced It Has Developed Gallium Nitride Wafers
Nov 28, 2012NGK Insulators, Ltd. has announced it has developed gallium nitride (GaN) wafers that double luminous efficiency of a LED light source compared to conventional materials. With the assistance of a research institute outside the Company, a ...
-
Startup Soraa Was a Keynote Presenter Revealing Technology for Producing GaN-on-GaN LEDs
Sep 14, 2012In this week's update:Are GaN-on-GaN LEDs closer to reality than previously thought?Update on our latest Webcast;DOE updates its SSL manufacturing roadmap;and OLEDs still trail LEDs in cost,but Plextronics hopes to change that. Back at ...
-
Soitec and Chongqing Silian Have Partnered to Jointly Develop GaN Template
Jul 11, 2012Soitec and Silian enter joint development agreement on GaN template wafers Soitec of Bernin, France, which makes engineered substrates including silicon-on-insulator (SOI) wafers (as well as III-V epiwafers through its Picogiga ...
Tags: raw material, GaN wafer
Related Products
-
2 Inch Epi Ready C Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers
-
a-Plane LED Substrate Sythetic Growth Rough/Polished Sapphire Wafers
-
Epi Ready M Plane Sapphire Substrates for Growth of GaN Epitaxial Wafers
-
2 Inch Epi Ready a Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers
-
Cplane to Mplane Polished Sapphire Wafers for Growth of GaN Templates
-
6 Inch Algan RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer
