GaN nanowires

Researchers Have Used Strain to Alter The Light-Emitting Properties of GaAs
Apr 29, 2014
Researchers in Switzerland and Norway have used strain to alter the light-emitting properties of gallium arsenide (GaAs) nanowires [G. Signorello et al, Nature Communications, vol5, p3655, published online 10 Apr 2014]. The researchers from ...

Tags: Electrical, Electronics
University of Michigan Researchers Demonstrated a Simpler
Apr 15, 2013
In a development that could make the advanced form of secure communications known as quantum cryptography more practical, University of Michigan researchers – supported by the US National Science Foundation (NSF) - have demonstrated a ...

Tags: GaN nanowires, semiconductor processing techniques, semiconductor