GaN on Sapphire articles & resources on Made-in-China.com

Chemical Lift-off of Full-Wafer Gallium Nitride with Zinc Oxide Interlayer

Aug 10, 2016

Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...

Tags: GaN, HVPE, free-standing wafers

LayTec Details Accurate Wafer Temperature Measurement During GaN-on-Si MOCVD For Power Electronics

Mar 9, 2016

Temperature measurement during metal-organic chemical vapor deposition (MOCVD) growth of GaN-on-silicon (GaN/Si) devices is challenging, notes in-situ metrology system maker LayTec AG of Berlin, Germany. Theoretically, conventional infrared ...

Tags: MOCVD, GaN devices

Ultraviolet Photodetectors on Free-Standing Gallium Nitride

Dec 2, 2015

Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...

Tags: AlGaN, Ultraviolet photodetectors, HVPE

Cree Co-founder on RF and Power Business New Brand Identity and Market Trends

Oct 14, 2015

Leading U.S. LED manufacturer Cree announced earlier this month, it will be rebranding its power and RF business as Wolfspeed. In an exclusive interview with LEDinside analyst and assistant manager Joanne Wu, Cree co-founder and CTO John ...

Tags: Cree, Wolfspeed, RF and power business, Market Branding

Demand for Larger Diameters to Boost GaN Substrate Market From $2.2bn in 2014 to $4bn by 2020

Sep 14, 2015

The gallium nitride (GaN) substrate market will grow from $2.2bn in 2014 to more than $4bn by 2020, forecasts research and consulting firm IndustryARC in the report 'Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on ...

Tags: Diameters, GaN Substrate Market

Researchers in USA Develops Vertical Schottky and Pn GaN Diodes on Silicon

Jul 27, 2015

Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...

Tags: electronics, semiconductor

OEM Says That a Leading LED Maker Has Placed a Repeat Order for an Agheatpulse RTP System

Jul 13, 2015

OEM Group of Phoenix, AZ, USA (which supplies new and re-manufactured semiconductor capital equipment and upgrades focused on emerging markets) says that a leading LED maker has placed a repeat order for an AGHeatpulse RTP (rapid thermal ...

Tags: OEM Group, LED light, LED lamp, LED panel, RTP

UCSB in The USA Has Improved Hole Concentrations in p-GaN

Jun 19, 2015

University of California Santa Barbara (UCSB) in the USA has improved hole concentrations in p-type gallium nitride (p-GaN) by using indium as a surfactant in ammonia-based molecular beam epitaxy (NH3MBE) [Erin C. H. Kyle et al, Appl. Phys. ...

Tags: Gallium Nitride, Indium Surfactant

Cambridge University Chooses Veeco's Propel MOCVD System

Apr 21, 2015

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK's University of Cambridge has ordered its Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) ...

Tags: GaN-on-Si, Power Electronics, LEDs

Seren Photonics Launched Its Next Generation of Semi-Polar Gan on Sapphire Templates

Mar 16, 2015

Seren Photonics Ltd of Pencoed Technology Park, UK (which was spun off from the University of Sheffield in February 2010) has launched its next generation of semi-polar gallium nitide (GaN) on sapphire templates. This latest generation of ...

Tags: Seren, GaN-on-Sapphire

SaveMoneyCutCarbon Has Announced a New Partnership as Master Distributor

Aug 27, 2014

UK full-service energy-efficiency specialist SaveMoneyCutCarbon.com has announced a new partnership as Master Distributor for Soraa Inc of Fremont, CA, USA and its GaN-on-GaN (gallium nitride on gallium nitride) technology, which provides ...

Tags: Soraa, Distributor, Electrical

MIT Has Demonstrated GaN Vertical Schottky and P-N Diodes

May 7, 2014

Massachusetts Institute of Technology (MIT) has demonstrated gallium nitride (GaN) vertical Schottky and p-n diodes on silicon Si substrates “for the first time” [Yuhao Zhang et al, IEEE Electron Device Letters, published online ...

Tags: GaN, MOCVD, Gallium Nitride Diodes

GaN-on-Si Technology Has Emerged Naturally as an Alternative to GaN-on-Sapphire

Apr 24, 2014

GaN-on-Si technology has emerged naturally as an alternative to GaN-on-sapphire — the mainstream technology for LED applications. But today, despite potential cost benefits, the mass adoption of GaN-on-Si technology for LED ...

Tags: GaN-on-Si, Electrical, Electronics

GaN-on-Sapphire Is The Existing Mainstream Technology for LED Manufacturing

Mar 24, 2014

Gallium nitride (GaN)-on-sapphire is the existing mainstream technology for LED manufacturing, but GaN-on-silicon technology has naturally appeared as an alternative to sapphire in order to reduce cost. However, a cost simulation by market ...

Tags: GaN-on-Si, GaN power electronics, LED

TSMC Discussed Its Phosphor-on-Die Approach to LEDs

Nov 20, 2013

During the Strategies in Light Europe Investor Forum, TSMC discussed its phosphor-on-die approach to LEDs while Seoul Semiconductor discussed the market opportunity and homogenous substrate development. The Strategies in Light (SIL) ...

Tags: LED, SIL Europe, Strategies

GaN on Sapphire

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