GaN on SiC articles & resources on Made-in-China.com

RF Power Amplifier Market to Grow From $3bn by 3.2X, at 12.2% CAGR, Through 2028

Sep 17, 2018

The approximately $3bn RF power amplifier market is poised to expand at a robust compound annual growth rate (CAGR) of 12.2% over 2018-2028, as the widening expansion of 5G cellular networks will remain the main driver of RF power amplifier ...

Tags: Power electronics

EpiGan Showcasing GaN Epiwafer Solutions for 5G

Aug 31, 2018

In booth J2554 of its local agent APEC at the SEMICON Taiwan show in Taipei (5-7 September) and in booth 354 at European Microwave Week (EuMW 2018) in Madrid, Spain (23-28 September), EpiGaN nv of Hasselt, near Antwerp, Belgium - which ...

Tags: GaN Epiwafer, epitaxial wafer

SPTS's Omega Plasma Etch System Chosen by Hiwafer for New 6'' GaN-on-SiC High-Power RF Device Production Line

Nov 28, 2017

SPTS Technologies Ltd of Newport, Wales, UK (an Orbotech company that manufactures etch, PVD and CVD wafer processing solutions for the MEMS, advanced packaging, LED, high-speed RF on GaAs, and power management device markets) has won an ...

Tags: SPTS, GaN-on-SiC, LED

Laytec Ships in-Situ Metrology System to GaN-on-SiC Customer

Oct 10, 2017

In-situ metrology system maker LayTec AG of Berlin, Germany recently shipped a comprehensive EpiCurve TT/Pyro 400 in-situ metrology hybrid system to an industrial customer in North America. The metrology station combines automated in-situ ...

Tags: MOCVD, GaN-on-SiC

Wolfspeed Extends 50V GaN Hemt Family to High-Efficiency 3.0GHz 250W

Aug 28, 2017

Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...

Tags: Wolfspeed, silicon carbide

Qorvo Launches Dual-Transistor GaN-on-Sic Asymmetric Doherty Amplifier Module for Macro Base-Stations

Aug 14, 2017

Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched an asymmetric Doherty amplifier enabling ultra-high levels of power efficiency in the ...

Tags: Qorvo, GaN, RF, GaN-on-SiC

Qorvo's Quarterly Revenue Down 8.3% Year-on-Year, But Exceeding Lowered Guidance by $10m

Aug 8, 2017

For fiscal first-quarter 2018 (ended 1 July 2017), Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has reported revenue of $639.9m, down slightly on ...

Tags: Qorvo, IDP product

Qorvo Launches First Dual-Channel GaN Front-End Module for 39GHz 5G Wireless

Jun 2, 2017

Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched what it claims is the first gallium nitride on silicon carbide (GaN-on-SiC) front-end ...

Tags: silicon carbide

Qorvo Makes Available 28GHz RF Products for 5G Base Stations

Jun 1, 2017

Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has announced broad commercial availability of four 28GHz RF products for 5G base stations. The firm ...

Tags: Qorvo, GaN, RF Products

Oxford Instruments Develops SiC Via Etch for GaN-on-SiC RF Device Manufacture

Oct 12, 2016

UK-based process equipment maker Oxford Instruments has announced the development and launch of a silicon carbide (SiC) via plasma etch process using its PlasmaPro100 Polaris etch system. SiC is becoming an increasingly important ...

Tags: Oxford Instruments, SiC, GaN RF devices

Wolfspeed Launches Highest-Power 50V L-Band Radar GaN HEMT

Sep 23, 2016

In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...

Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016

EpiGaN Adds Brussels/Beijing-Based Private Equity Fund ACAPITAL as Investor

Aug 31, 2016

EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...

Tags: EpiGaN, GaN-on-Si, ACAPITAL

EpiGaN Nominated for Eu Innovation Radar Prize

Aug 17, 2016

EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...

Tags: EpiGaN, GaN-on-Si, nomination

Infineon to Acquire Wolfspeed for $850m

Jul 16, 2016

Infineon Technologies AG of Munich, Germany has entered into a definitive agreement to acquire the Wolfspeed Power & RF division of Cree Inc of Durham, NC, USA for $850m in cash (about €740m). The deal also includes the related silicon ...

Tags: Cree, Wolfspeed, Infineon

Plextek RFI Unveils Phased-Array GaN MMIC Reference Design

Jul 16, 2016

Plextek RFI Ltd of Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, has announced a new reference design for a gallium nitride (GaN) power amplifier (PA) monolithic microwave integrated circuit ...

Tags: MMICs, microwave, millimeter-wave modules

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