GaN on silicon articles & resources on Made-in-China.com

Qorvo Launches Compact GaN L- and S-Band Power Amplifiers for Advanced Radar Systems

Oct 12, 2016

Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched two new power amplifiers (PAs) including what is claimed to be the first ...

Tags: Qorvo, PAs, GaN technology

MACOM Showcasing Dc-100ghz MMICs atEuMW

Sep 9, 2016

In booth #207 at European Microwave Week (EuMW 2016) at ExCel London, UK (4–6 October), MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, ...

Tags: EuMW 2016, MACOM, MMICs

Dialog Enters GaN Market with Integrated Devices Targeting Fast-Charging Power Adapters

Aug 30, 2016

Dialog Semiconductor plc of London, UK, a fabless provider of highly integrated power management, AC/DC power conversion, solid-state lighting (SSL) and Bluetooth low-energy technology, has announced its first gallium nitride (GaN) power IC ...

Tags: GaN, Dialog Semiconductor plc, SSL

UIUC Uses MOCVD Growth of Cubic GaN on Silicon to Boost Efficiency and Brightness of Green LEDs

Aug 3, 2016

Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...

Tags: Green LEDs, MOCVD

Wide-Bandgap Power Semiconductor Device Market to Grow at 33% Annually to $3.7bn in 2025

Aug 1, 2016

Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...

Tags: Semiconductor, GaN power devices

GaN RF Device Market to Grow at 14% CAGR, Rising by 2.5x by End-2022

Mar 30, 2016

Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...

Tags: GaN RF GaN-on-SiC GaN-on-Si

Plessey Launches LED Beam Control Modules For Medium-And High-Power Lighting

Mar 15, 2016

At the Light + Building 2016 trade fair in Frankfurt, Germany (13-18 March), UK-based Plessey Semiconductors Ltd is releasing its new LED beam control module. Stellar is the firm's latest GaN-on-silicon LED solution and showcases the ...

Tags: Plessey, GaN-on-Si, HB-LEDs

GaN and SiC Power Semiconductor Market to Surpass $1bn in 2020 Then $3.7bn in 2025

Mar 13, 2016

Energized by demand from hybrid and electric vehicles, power supplies and photovoltaic (PV) inverters, the emerging global market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors will rise from just $210m in 2015 to ...

Tags: Semiconductor Market, GaN, SiC

LayTec Details Accurate Wafer Temperature Measurement During GaN-on-Si MOCVD For Power Electronics

Mar 9, 2016

Temperature measurement during metal-organic chemical vapor deposition (MOCVD) growth of GaN-on-silicon (GaN/Si) devices is challenging, notes in-situ metrology system maker LayTec AG of Berlin, Germany. Theoretically, conventional infrared ...

Tags: MOCVD, GaN devices

GaN Power Devices Market to Grow at 24.5% to $2.6bn in 2022

Feb 29, 2016

The global gallium nitride (GaN) power device market will rise at a compound annual growth rate (CAGR) of 24.5% from 2016 to $2.6bn in 2022, according to the report 'GaN Power Devices Market - Global Forecast to 2022' from ...

Tags: GaN power devices

Power Electronics MOCVD Market Growing at 40% CAGR to Over $205m in 2019

Feb 12, 2016

The global metal-organic chemical vapor phase deposition (MOCVD) market for power electronics is will rise at a striking compound annual growth rate (CAGR) of over 40% to more than $205m in 2019, according to the report 'Global MOCVD Market ...

Tags: MOCVD, Power electronics

Scandium Nitride Buffer for Gallium Nitride on Silicon Applications

Dec 8, 2015

Researchers in Germany are proposing scandium nitride (ScN) as a suitable buffer for gallium nitride (GaN) on silicon (Si) growth [L. Lupina et al, Appl. Phys. Lett., vol107, p201907, 2015]. The attraction of ScN is a very small mismatch ...

Tags: GaN devices, microscope

Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes

Dec 2, 2015

Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...

Tags: GaN-on-silicon LEDs, Plessey MOCVD

GaN Systems Announces 10x Production Increase at TSMC

Dec 2, 2015

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Taiwan Semiconductor Manufacturing Corporation (TMSC, the ...

Tags: GaN Systems, E-mode GaN FETs, TSMC

Plessey Named 2015 Company of The Year by The NMI

Nov 27, 2015

At an annual awards ceremony in London attended by more than 350 guests from the UK electronic systems industry, UK-based Plessey has been named Company of the Year by the NMI (National Microelectronics Institute), the industry trade body ...

Tags: Plessey, GaN-on-Si, HB-LEDs

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