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GaN transistor
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Infineon Ships 5 Billionth Bulk-CMOS RF Switch
Jul 19, 2018After beginning volume production of its first bulk-CMOS radio frequency (RF) switch in 2008, Infineon Technologies AG of Munich, Germany has now reached an annual run-rate far exceeding 1 billion and a cumulative shipments of 5 billion RF ...
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GaN Systems Launches Evaluation Board Combining GaN Power Transistors with Peregrine's E-Hemt Drivers
Oct 20, 2017GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – has made available the GS61004B-EVBDC evaluation ...
Tags: GaN Systems, integrated circuits
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Peregrine's New PE29102 FET Driver Brings Fastest Switching Speeds to GaN Class-D Audio
Oct 18, 2017Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE29102 high-speed FET driver. With a ...
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GaN Systems and Taiwan's Ministry of Economic Affairs Collaborate on GaN Technology to Meet Global Power Challenges
Oct 10, 2017GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control – and Taiwan’s Ministry of Economic Affairs (MOEA) have ...
Tags: GaN Systems, Power Challenges
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NRL Demonstrates Growth of Thin-Film Niobium Nitride
Jul 7, 2017The US Naval Research Laboratory (NRL) has demonstrated the ability to grow thin films of the transition-metal nitride Nb2N (niobium nitride). The thin crystalline material has a similar structure to gallium nitride (GaN), but its ...
Tags: Thin-Film Niobium Nitride, LED
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EPC Launches GaN Half-Bridge Enabling 12V to 1.8V System Efficiency Over 85% at 5MHz at 14A Output
Jun 2, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the EPC2111, a 30V ...
Tags: transistors, GaN transistor
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Mitsubishi Electric and Nanosemi to Demo Ultra-Wide-Band Linearized Doherty Amplifier for Next-GeN Lte Base Stations
May 24, 2017In booth 1827 at the IEEE MTT-S International Microwave Symposium (IMS2017) in Honolulu, Hawaii (6-8 June), Mitsubishi Electric US Inc of Cypress, CA is presenting a hands-on mini lab showcasing its high-efficiency, wide-band gallium ...
Tags: Mitsubishi, Electric
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e2v to Supply GaN Systems' 100V and 650V Hi-Rel GaN Transistors to Global Aerospace & Defense Industry
Oct 8, 2016A master supply agreement has established e2v inc of Milpitas, CA, USA (which provides solutions, sub-systems and components to the medical & science, aerospace & defense and commercial & industrial markets) as the global supplier of 100V ...
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Toyoda Gosei Develops High-Voltage GaN Power Semiconductor Device for Large-Current Operation
Jul 12, 2016Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan has developed what is claimed to be the first 1.2kV-class power semiconductor device chip capable of large-current operation exceeding 20A. Picture: Forward current–voltage ...
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Panasonic Showcases GaN-Based Technologies at PCIM Europe
May 23, 2016At the PCIM (Power Conversion Intelligent Motion) Europe 2016 event in Nuremberg, Germany (10-12 May), Panasonic Automotive & Industrial Systems Europe showcased its technology lineup, highlighting innovations including passive components, ...
Tags: GaN power devices, SiC
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Plextek RF Webinar on X-Band PA Design Using SMT Plastic-Packaged GaN Transistors
Dec 2, 2015Plextek RF Integration of Great Chesterford, near Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, says that on 3 December at 18:00GMT (10:00PT/13:00ET/19:00CET) its CEO Liam Devlin is presenting ...
Tags: Plextek, GaN Transistors, GaN transistor
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Suppressing Current Collapse in Normally-off Gallium Nitride Transistor
Nov 12, 2015Japan's Panasonic Corp has reported the suppression of current collapse up to 800V for a normally-off gallium nitride (GaN) transistor by embedding a hybrid drain in a gate-injection transistor (HD-GIT) structure [Kenichiro Tanaka et al, ...
Tags: Panasonic, GaN transistor, AlGaN
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GaN Systems' Launches Half-Bridge Evaluation Board for GaN Transistor Circuit Design
Nov 9, 2015GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has launched its Half-Bridge Evaluation Board, which demonstrates ...
Tags: GaN Transistor Circuit, power switching semiconductors
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GaN Systems Is Claiming That Its GS66504B Is The World's Smallest 650V
May 28, 2015GaN Systems Inc in Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – is claiming that its GS66504B – one of a family ...
Tags: GaN Systems, Power electronics, GaN SiC
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Girvan Patterson Presented a Paper 'the Automotive Market Opportunity for Gan'
May 26, 2015At the Power Conversion Intelligent Motion (PCIM) Europe 2015 event in Nurnberg, Germany (19-21 May), president Girvan Patterson of GaN Systems Inc in Ottawa, Ontario, Canada - a fabless developer of gallium nitride (GaN)-based power ...
