GaN wafers articles & resources on Made-in-China.com

Lasertec Launches GALOIS GaN Wafer Inspection and Review System

Dec 7, 2017

Metrology and inspection equipment maker Lasertec Corp of Tokyo, Japan has launched the GALOIS defect inspection and review system series, designed specifically for the inspection and analysis of gallium nitride (GaN) wafers. The firm is ...

Tags: Metrology, inspection equipment

Kyma and Quora Partner on GaN Substrate Materials

Jun 23, 2016

Kyma Technologies Inc of Raleigh, NC, USA (which provides crystalline nitride materials, crystal growth and fabrication equipment, and power switching electronics) and Quora Technology Inc have announced a strategic partnership in the ...

Tags: Kyma technologies, GaN, Quora

SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics

Oct 19, 2015

When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...

Tags: Power Electronics, semiconductor, LED

US Air Force Awards Cree's Power and RF Division $4.1m Contract Extension

Sep 14, 2015

The US Air Force has awarded Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices as well as LEDs, a $4.1m follow-on contract, enabling qualification of a high-performance power ...

Tags: GaN wafers, SiC

Cree Makes SIC and GAN Wafers and Devices as Well as LEDs

May 19, 2015

Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices as well as LEDs, has submitted a draft registration statement on a confidential basis to the US Securities and Exchange Commission ...

Tags: silicon carbide, gallium nitride, LEDs

CREE Launches Doherty PA Reference Design

Feb 2, 2015

To address the needs of small-cell designers, Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the CDPA35045 asymmetric Doherty power amplifier (PA) reference design ...

Tags: PA Reference Design, small-cell designers, Electrical

CREE Extended Family of 50V Discrete Gan Hemt Die with The Release of Three New Components

Jan 14, 2015

Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, recently extended its family of 50V discrete GaN high-electron-mobility transistor (HEMT) die with the release of three new ...

Tags: electron drift velocity, gallium arsenide technologies, Electrical

EDN Has Named Its C2M0025120D 1200V,25m&Omega Sic MOSFET as The 'hot 100 Products of 2014'

Dec 5, 2014

Cree Inc of Durham, NC, USA, which manufactures silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, says that EDN (Electronic Design News) has named its C2M0025120D 1200V, 25mΩ SiC MOSFET as one of the ‘Hot 100 ...

Tags: silicon carbide, gallium nitride, Electrical

ILT of Aachen Develops an Analysis Technology For GaN

Nov 17, 2014

The Fraunhofer Institute for Laser Technology ILT of Aachen, Germany has worked with RWTH Aachen University’s Institute of Physics (IA) to develop an analysis technology that, for the first time it is claimed, allows the structural ...

Tags: LED light, Laser system

Versatilis' Patent Shows How Fine Semiconductor Particles to Be Processed Into Micro-LEDs

Oct 21, 2014

The US Patent Office has issued US Patent No. 8,859,310 to Versatilis LLC of Winooski, VT, USA (a technology and business development firm that focuses on novel materials and processes for electro-optical devices, as well as extending its ...

Tags: US Patent, Semiconductor

TriQuint Is The First to Achieve Manufacturing Readiness Level 9

Aug 20, 2014

RF front-end component maker TriQuint Semiconductor Inc of Hillsboro, OR, USA says that it is the first gallium nitride (GaN) RF chip maker to achieve Manufacturing Readiness Level (MRL) 9, meaning that its GaN manufacturing processes have ...

Tags: TriQuint, GaN, front-end component

Ammono S.A. Is Partnering with Kyma Technologies Inc of Raleigh

Jan 24, 2014

Ammono S.A. of Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, has announced that it is partnering with Kyma Technologies Inc of Raleigh, NC, USA and MicroLink Devices of Niles, IL, USA in two novel ...

Tags: efficiency of power electronics, semiconductor materials

Researchers at Germany's Ulm University Have Used LayTec's Epicurve TT in-Situ System

Nov 6, 2013

LayTec AG of Berlin, Germany, which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications, says that researchers at Germany's Ulm University have used LayTec's EpiCurve TT ...

Tags: LayTec HVPE GaN, Electrical, Electronics

LED Applications Will Be The Key Drivers for The Bulk Gallium Nitride Market

Nov 6, 2013

In either a cautious or a more aggressive scenario, LED applications will be the key drivers for the bulk gallium nitride (GaN) market, reckons market research firm Yole Développement in its report 'Free-Standing & Bulk GaN ...

Tags: LED, Electrical, Electronics

Cheryl Martin Has Announced $27m in Funding

Oct 22, 2013

ARPA-E deputy director Cheryl Martin has announced $27m in funding from the US Department of Energy's (DOE) Advanced Research Projects Agency-Energy (ARPA-E) for 14 projects aimed at developing next-generation power conversion devices that ...

Tags: Electrical, Electronics

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