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HEMT technology
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VisIC Launches 1200V Family of GaN Power Switching Devices with Integral Iso-Driver
Sep 20, 2016At the IEEE Energy Conversion Congress and Exposition (ECCE2016) in Milwaukie, WI, USA (18-22 September), VisIC Technologies Ltd of Nes Ziona, Israel - a fabless developer of power conversion devices based on gallium nitride (GaN) ...
Tags: ECCE2016, VisIC Technologies, MISHEMTs
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GaN Devices Market Growing at CAGR of 15.1% From $481.8m in 2014 to $1315m in 2021
Aug 10, 2015The global gallium nitride (GaN) industrial devices market is rising at a compound annual growth rate (CAGR) of 15.1% from $481.8m in 2014 to $1315m in 2021, forecasts Transparency Market Research in its report 'GaN Industrial Devices ...
Tags: industrial devices, LED devices
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Anadigics Is Shipping Production Volumes of Its Aca1216 Surface-Mount Line Amplifier
May 14, 2015Broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, US is shipping production volumes of its ACA1216 surface-mount line amplifier to Applied Optoelectronics Inc's China subsidiary Global Technology, ...
Tags: Anadigics, CATV Infrastructure
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MANGA Has Succeeded in Implementing a Supply Chain for The Realization of Power Electronic
Jul 10, 2014Under the leadership of the European Defence Agency (EDA), the multi-national R&D project MANGA (Manufacturable GaN-SiC-substrates and GaN epitaxial wafers supply chain) says that it has succeeded in implementing a supply chain for the ...
Tags: GaN Technologies, HEMT structures, electronics components
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SCTE Cable Expanded Its Surface-Mount Line Amplifier Family
Oct 24, 2013In booth 608 at the Society of Cable Telecommunications Engineers (SCTE) Cable-Tec Expo 2013 in Atlanta (22-24 October), broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has announced that it ...
Tags: Anadigics, Amplifier, Electrical, Electronics
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Fujitsu Presented Details of a High-Sensitivity Receiver Chip
Oct 23, 2013At the Compound Semiconductor IC Symposium (CSICS 2013) in Monterey, CA on 13 October, Japan's Fujitsu Ltd and Fujitsu Laboratories Ltd presented details of a high-sensitivity receiver chip they have developed that, it is reckoned, will ...
Tags: Fujitsu InP HEMT, Electrical, Electronics
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Anadigics Introduced a Family of CATV Infrastructure Products
Jul 25, 2013Broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has introduced a family of CATV infrastructure products that is optimized for the proposed data over cable service interface specification ...
Tags: Anadigics, Electrical, Electronics
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Japan Has Released The MB51T008A
Jul 15, 2013Fujitsu Semiconductor Ltd of Yokohama, Japan has released the MB51T008A, a silicon-substrate-based, gallium-nitride (GaN) power device with a drain-source breakdown voltage (V(BR)DSS) of 150V. Features of the MB51T008A include: (1) ...
Tags: Power Device, Electrical
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CREE Inc of Durham,Nc,USA Has Launched a Range of 50V GaN HEMT Devices
Oct 29, 2012Cree Inc of Durham,NC,USA has launched a range of 50V gallium nitride(GaN)high-electron-mobility transistor(HEMT)devices that,it is claimed,enable a significant reduction in the energy needed to power cellular networks. The world's ...
Tags: GaN RF, HEMT technology, cost saving, cellular-network
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Fujitsu Develops First High-Output,Single-Chip 10GHz Transceiver Using GaN Hemt
Jun 22, 201222 June 2012 Fujitsu develops first high-output,single-chip 10GHz transceiver using GaN HEMT At the IEEE MTT-S International Microwave Symposium(IMS 2012)in Montreal,Canada(17-21 June),Fujitsu Laboratories of Kawasaki,Japan presented what ...