Due to the slow growth in the GaAs device market and increasing use of multi-band GaAs power amplifiers in cellular applications, total demand for semi-insulating (SI) GaAs epitaxial substrates (from manufacturers such as IQE, VPEC, Kopin, ...
Tags: EPI Production, Electronics
Mass production of GaN template wafers based on sapphire substrates could free LED manufacturers' MOCVD reactors for more LED production and lower component cost helping drive the deployment of SSL. Hitachi Cable has become the second ...
Tags: Hitachi Cable, GaN-Template LED, Lighting
Hitachi Cable has launched a new mass-production technology for GaN-templates as shown in Figures 1 and 2 below. The process allows high-quality GaN single-crystal thin film to be grown on a sapphire substrate and the company plans to ...
Tags: Hitachi Cable, LEDs
Hitachi Cable, Ltd. announced today that it has developed a new mass-production technology for GaN-templates, in which a high-quality gallium nitride (GaN) single-crystal thin film is grown on a sapphire substrate. Using this product as a ...
Tags: Hitachi, Gan-Template Product
Tokyo-based Hitachi Cable Ltd says that it has developed new mass-production technology for gallium nitride (GaN) templates (see Figure 1), in which a high-quality gallium nitride (GaN) single-crystal thin film is grown on a sapphire ...
Tags: Hitachi Cable, GaN substrate, Electronics
Rapidly declining pricing, softening demand and a still uncertain global economy are creating challenges for manufacturers at all stages of the optical industry supply chain, according to the Strategy Analytics GaAs and Compound ...
Tags: opto market, optical industry, LEDs, optoelectronic devices
Hitachi Cable's subsidiary Hitachi Cable Europe (HCE) has built a new automotive component manufacturing facility in the Czech Republic to raise sales in the Europe. The new 3,200m2 is expected to begin its commercial production from ...
Tags: Hitachi Cable Europe, automotive component, commercial production
4 September 2012 Hitachi Cable demo first GaN vertical diode with 3000V breakdown and 1mΩcm2 on-resistance Picture:GaN substrates for power devices.Hitachi Cable Ltd says that it has succeeded in the trial manufacture of what is ...
Tags: Hitachi Cable, GaN, diode
Slow growth in the gallium arsenide (GaAs) device market, coupled with a shift away from GaAs technology for handset switches, reduced demand for semi-insulating GaAs bulk substrates by 4% in 2011, according to the recently released report ...
Tags: GaAs bulk substrates, Raw material
Research and Markets has added a new report titled "Global LED Chips Market 2011-2015" to its portfolio. Analysts from TechNavio have predicted that the global LED vchips market would grow at a compounded annual growth rate (CAGR) of 21.6% ...
Tags: Led Chips