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III Vs on silicon
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KTH-Royal Institute Create Heterojunctions Consisting of N-InP and P-Type Silicon
Jun 16, 2015KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
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What Belgium Claims Are The First III-V Compound Semiconductor FinFET Devices
Nov 6, 2013By using a unique silicon fin replacement process, Imec of Leuven, Belgium has demonstrated what it claims are the first III-V compound semiconductor FinFET devices integrated epitaxially on 300mm silicon wafers. The nanoelectronics ...
Tags: FinFETs III-V CMOS, Electrical, Electronics