IMEC articles & resources on Made-in-China.com

Taiwan Tech Firms Show off Innovative Tech Products at MWC 2018

Mar 6, 2018

Held annually at Fira Gran Via in Barcelona, Spain, Mobile World Congress (MWC), is the most influential trade fair for mobile industry. This year's MWC, running from February 25 through 28 and themed “Creating a Better Future”, ...

Tags: mobile industry, MWC 2018

Imec Demos First Sub-10nm Germanium Gate-All-Around FETs

Jun 16, 2017

At the 2017 Symposia on VLSI Technology and Circuits in Kyoto, Japan (5-8 June), nanoelectronics and photovoltaics research centre Imec of Leuven, Belgium unveiled new process improvements for next-generation devices. For the first time it ...

Tags: Imec, transistors

Imec Achieves Record-Low Source/Drain Contact Resistivity for PMOS Transistors

Jun 16, 2017

At the 2017 Symposia on VLSI Technology and Circuits in Kyoto, Japan (5-8 June), nanoelectronics and photovoltaics research centre Imec of Leuven, Belgium reported record values below 10-9Ω.cm2 for PMOS source/drain contact ...

Tags: PMOS Transistors, wafers

Moore's Law and China's Fast-Growing IC Industry

Mar 20, 2017

At Semicon China 2017, executives at chip giant Intel, IC packager Advanced Semiconductor Engineering, equipment vendors ASML, Lam Research and Tokyo Electron (TEL), and nano-electronics research institute Imec talked about innovation to ...

Tags: IC, Semiconductor, IC Industry

Stacked Perovskite/CIGS Solar Module Hits Record 17.8% Efficiency

Sep 29, 2016

Researchers at nanoelectronics research center imec of Leuven, Belgium (a partner in Solliance and EnergyVille), Germany's Karlsruhe Institute of Technology (KIT), and ZSW (Zentrum für Sonnenenergie- und Wasserstoff-Forschung — ...

Tags: stacked perovskite, CIGS, solar module

Integrating InGaAs Well in Ridges on 300mm Silicon

Sep 29, 2016

Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...

Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University

EpiGaN Adds Brussels/Beijing-Based Private Equity Fund ACAPITAL as Investor

Aug 31, 2016

EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...

Tags: EpiGaN, GaN-on-Si, ACAPITAL

EpiGaN Nominated for Eu Innovation Radar Prize

Aug 17, 2016

EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...

Tags: EpiGaN, GaN-on-Si, nomination

IMEC Extends Global R & D Footprint with Opening of IMEC Florida

Jul 12, 2016

At its annual Imec Technology Forum (ITF) USA on 11 July, a half-day conference at the San Francisco Marriott Marquis hotel held in conjunction with the SEMICON West trade show and supported by industry association Semiconductor Equipment ...

Tags: IMEC, GaN-on-Si, III-Vs-on-silicon

Three-Year €33m European Project Reference to Extend RF-Soi Technology for Above-1GB/S 4G+ Wireless Front-End Modules

Jul 12, 2016

The pan-European REFERENCE research project - created to leverage disruptive radio-frequency silicon-on-insulator (RF-SOI) technology in developing industrial solutions for the performance, cost and integration needs of RF front-end modules ...

Tags: RF-SOI, ECSEL, 4G+communications

Transfer Printing of Optically Pumped III-V Device on Silicon-on-Insulator

Jun 30, 2016

Ghent University/IMEC in Belgium and X-Celeprint in Ireland/USA claim "the first III-V optoelectronic components transfer printed on and coupled to a silicon photonic integrated circuit" [Andreas De Groote et al, Optics Express, vol24, ...

Tags: III-V optoelectronic, silicon photonic

Epigan's Production Facility Certified as Compliant to ISO9001: 2015

Jun 30, 2016

EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers, says that on 7 June it received official notification from the International ...

Tags: EpiGaN, GaN-on-Si

ICT-Streams EU Project to Develop Transceiver and Routing Technologies for Multi-Terabit on-Board Chip-to-Chip Communications

Jun 27, 2016

ICT-STREAMS, a part of the European Union Horizon 2020 program, is a new three-year project launched on 1 February (followed by a kick-off meeting at the Aristotle University of Thessaloniki, Greece on 24-25 February) with the goal of ...

Tags: III-Vs-on-Si, silicon photonics

Europe's TOP-HIT Transfer Printing Consortium to Boost Large-Scale Heterogeneous Integration of Diverse Materials and Devices

Jun 3, 2016

Ireland's Tyndall National Institute (based at University College Cork) is leading the European consortium TOP-HIT (Transfer-print OPerations for Heterogeneous INtegration) to develop novel technology that will address the challenge of ...

Tags: Transfer Printing, integrating components

Solmates Wins Order for PLD System From Imec and Joins 'beyond CMOS' Industrial Affiliation Program

Apr 20, 2016

Solmates of Science Park Twente in Enschede, The Netherlands (a spin-off from the MESA+ Institute of Nanotechnology) has received an order for one of its pulsed laser deposition (PLD) equipment systems from nanoelectronics research center ...

Tags: IMEC, PLD

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