ITO articles & resources on Made-in-China.com

Denso to Expand US Footprint with $1bn Investment

Oct 12, 2017

Japanese auto components supplier Denso is investing $1bn in its Maryville, Tennessee location in the US as part of its commitment to advancing automotive innovation in North America. The investment will focus on vehicle electrification ...

Tags: Denso, auto components

Toshiba Machine Extends Chinese Production of EC-SXII Series

Apr 25, 2017

Toshiba Machine has expanded Chinese production of its EC-SXII Series, the global standard in injection molding machines. The company is adding the EC280SXII and the EC350SXII as two additional models to its production lineup at its China ...

Tags: Toshiba Machine, injection molding machines

Reducing Misfit Dislocations in Green Semi-Polar Light-Emitting Diodes

Aug 26, 2016

University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...

Tags: LAE, GaN, LEDs

Relaxing Multiple Quantum Wells with Low-Temperature Barriers

Jul 27, 2016

South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...

Tags: Low-Temperature Barriers, Quantum

Silicon Dioxide Charge Inverter Boosts Hole Injection in IngaN LEDs

Apr 21, 2016

Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...

Tags: InGaN LEDs InGaN Silicon dioxide MOCVD

Demonstration of Novel High-Efficiency Blue LEDs on Silicon Substrates

Apr 6, 2016

Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...

Tags: High-Efficiency Blue LEDs

Indium Gallium Nitride Barriers Enhance LED Power And Efficiency

Mar 15, 2016

South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...

Tags: LEDs, MQW, barriers, InGaN, MOCVD

Sony Admits Oculus Rift Is ‘Better’ Than Playstation VR

Mar 11, 2016

In the race towards virtual reality dominance, Sony has made a curious admission. A senior Sony executive has admitted that the Oculus Rift offers a better experience than PlayStation VR. Speaking to Polygon, Masayasu Ito, Executive VP ...

Tags: Sony, HTC Vive, Playstation VR

Hybrid Growth of Gallium Nitride Tunnel Junctions

Feb 14, 2016

University of California Santa Barbara (UCSB) in the USA has been developing a hybrid technique to create III-nitride tunnel junctions (TJs) using a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy ...

Tags: Gallium Nitride Tunnel, Hybrid

Touch Makers Increase Investment in Niche Products

Dec 8, 2015

The China International Touchscreen Exhibition (C-Touch) was recently held in Shenzhen, China, featuring a number of local and international touch and IC makers. Throughout the exhibition there were several noticeable trends namely a ...

Tags: wearables segments, smartphone industry

The Fraunhofer Institute Tests Graphene as An Alternative for Transparent Electrode for OLEDs

Oct 14, 2015

The Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology FEP will show for the first time organic light emitting diodes (OLEDs) on graphene at Plastic Electronics 2015 (6th − 8th of October ...

Tags: OLED, sgraphene, The Fraunhofer Institute, transparent electrode

Tunnel Junction for Vertical-Cavity Surface-Emitting Laser

Sep 23, 2015

University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...

Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE

NREL and University of California Santa Barbara Have Developed a Wafer Bonding Technology

Jul 17, 2015

The National Renewable Energy Laboratory (NREL) and University of California Santa Barbara in the USA have developed a wafer bonding technology for III-V materials and silicon (Si) using transparent conductive oxide (TCO) interlayers of ...

Tags: electronic components, semiconductor, TCO IZO Tandem solar cells

Singulus Has Taken Its Vacuum Coating Systems for Solar Technology

Jun 30, 2015

Singulus Technologies AG of Kahl am Main, Germany says that it has taken its product family of vacuum coating systems for solar technology to the next development level and introduced and installed inline sputtering system for copper indium ...

Tags: Singulus, vacuum coating

Researchers in USA and Saudi Arabia Producing 610nm-Wavelength Red Lasers

May 4, 2015

Researchers in USA and Saudi Arabia have been producing 610nm-wavelength red lasers with III-nitride nanowires (NWs) grown on silicon [Shafat Jahangir et al, Appl. Phys. Lett., vol106, p071108, 2015]. With a view to plastic fiber optical ...

Tags: plastic fiber, Electronics

ITO

Related Products