JEDEC articles & resources on Made-in-China.com

Vishay Launches True Green LEDs in 1.6mm X 0.8mm SMD 0603 ChipLED Package

Jun 26, 2017

The Optoelectronics group of Vishay Intertechnology Inc of Malvern, PA, USA has launched a new series of true green LEDs in a compact surface-mount 0603 ChipLED package. Measuring 1.6mm by 0.8mm with an ultra-thin 0.55mm profile, the ...

Tags: ChipLED Package, package

Vishay Launches Compact Super Red, Red, Amber and Yellow Ultrabright LEDs with Dome Lens

Apr 26, 2017

The Optoelectronics group of Vishay Intertechnology Inc of Malvern, PA, USA has introduced a new series of AllnGaP-on-Si super red, red, amber and yellow ultrabright LEDs in compact untinted surface-mount packages with dome lenses. ...

Tags: LED, LCD switches

PowerAmerica Funding Speeds Transphorm's Development of 900V GaN HEMT Product

Apr 25, 2017

Due to funding assistance from PowerAmerica – a private-public partnership between the US Department of Energy, industry and academia – Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and manufactures what ...

Tags: PowerAmerica, GaN products

Samsung Electronics Now Ranked No. 1 in Enterprise SSD Market

Sep 29, 2016

Samsung Electronics, the world leader in advanced memory technology, today announced that it is now the world’s number one supplier of enterprise solid state drives used in corporate data centers, as reported by a number of analyst ...

Tags: number one supplier, enterprise SSD market

Samsung Introduces World's First UFS Removable Memory Card Line-up, Offering up to 256-Gigabyte (GB) Capacity

Sep 29, 2016

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today unveiled the industry’s first removable memory cards based on the JEDEC Universal Flash Storage (UFS) 1.0 Card Extension Standard*, for use in ...

Tags: Samsung, UFS removable memory card, 256GB Capacity

Telcodium Partners with Transphorm on First Redundant Power Supplies Using GaN Fets

Sep 20, 2016

Power supply design firm Telcodium of Boucherville, QC, Canada, in collaboration with Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC-qualified 650V gallium nitride (GaN)-based devices for ...

Tags: Telcodium, Transphorm, GaN FETs

EPC Publishes Reliability Report After 8 Million GaN Device Hours of Stress Testing

Aug 3, 2016

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA - which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has announced its Phase Eight ...

Tags: GaN Device, integrated circuits

EPC Publishes Reliability Report Documenting Over 17bn Field-Device Hours With Very Low Failure Rate

Mar 16, 2016

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced its Phase Seven Reliability ...

Tags: EPC, E-mode GaN FETs, GaN-on-Si

Transphorm Announced The Introduction of Two Co-Branded 600v GaN Cascode Transistors

Mar 17, 2015

At the 30th IEEE Applied Power Electronics Conference and Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and provides gallium nitride-based power conversion ...

Tags: APEC 2015, GaN Power Devices

Japan Started Mass GaN Power Devices for Switching Applications

Jan 28, 2015

Transphorm Inc, Transphorm Japan Inc, and Fujitsu Semiconductor Ltd have announced that Fujitsu Semiconductor group's CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of gallium nitride (GaN) ...

Tags: GaN Power Devices, Electrical

Tantamount TL3 Devices Are Rated From 4V to 50V

Aug 18, 2014

Available in five standard EIA case sizes (A through E), Tantamount TL3 devices are rated from 4V to 50V. They have a reliability at rated voltage of 0.50 per cent over 1,000hr at 85°C. CapacitanceThat property of a system of conductors ...

Tags: TTI, Electrical, Electronics

Transphorm Inc Obtained a Sole Worldwide License

May 14, 2014

Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) has obtained a sole worldwide license to Furukawa Electric Co Ltd's extensive gallium nitride (GaN) power device ...

Tags: Transphorm GaN-on-Si GaN HEMT, power conversion devices, power modules

Transphorm Will Give Two Presentations on 20 March

Mar 5, 2014

At last year’s IEEE Applied Power Electronics Conference & Exposition (APEC), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) introduced the first - and only - ...

Tags: Transphorm GaN-on-Si, Electrical

Vishay Launched a Series of Power Minileds in Ultra-Compact 2.3mm

Jan 9, 2014

Vishay Intertechnology Inc of Malvern, PA, USA has launched a series of power MiniLEDs in ultra-compact 2.3mm by 1.3mm by 1.4mm SMD packages. Using the latest aluminum indium gallium phosphide (AlInGaP) technology, the VLMx234.. series ...

Tags: Vishay, LEDs AlInGaP, Power Minileds

Launching New 70mA Drive Current LED Family

Dec 20, 2013

A new family of LEDs in a PLCC-2 package that can handle higher drive currents and thus produce improved luminous intensity is the newest product from the Optoelectronics group of Vishay Intertechnology, Inc. (NYSE: VSH). The new ...

Tags: LED Family, Vishay Intertechnology

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