LED Fabrication articles & resources on Made-in-China.com

Soraa Moves Forward with New York Manufacturing Expansion Plans

Nov 11, 2015

Soraa, the world leader in the development of advanced lighting products and gallium nitride on gallium nitride (GaN on GaN) LED technology, announced today that it will open a new semiconductor fabrication plant in Syracuse, New York. In ...

Tags: Soraa, GaN LED lamps, lighting products

California-Based Soraa to Open LED Fab in New York State, for Production From Second-Half 2016

Nov 2, 2015

Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, is to open a new semiconductor fabrication plant in Syracuse, NY. In partnership with the ...

Tags: LED Fab, LED

OEM Says That a Leading LED Maker Has Placed a Repeat Order for an Agheatpulse RTP System

Jul 13, 2015

OEM Group of Phoenix, AZ, USA (which supplies new and re-manufactured semiconductor capital equipment and upgrades focused on emerging markets) says that a leading LED maker has placed a repeat order for an AGHeatpulse RTP (rapid thermal ...

Tags: OEM Group, LED light, LED lamp, LED panel, RTP

OEM Group Has Now Expanded Its Production

Jul 7, 2015

With these orders, OEM Group has now expanded its production proven and patented ECO-Process wafer surface preparation solutions from the established markets of power device, CMOS IC and MEMS manufacturing into UB-LED fabrication (a new ...

Tags: OEM Group, LED, Semitool Wet processing systems, LED lighting, LED lamp

The Light Output Power for The Sc-Qb LED Was 47% Higher Than for a Thin QB Device

Nov 19, 2014

Researchers based in China have found “remarkably reduced efficiency droop” from staircase (SC) thin indium gallium nitride (InGaN) quantum barrier (QB) light-emitting diodes (LEDs) [Kun Zhou et al, Appl. Phys. Lett., vol105, ...

Tags: High Current, remarkably reduced efficiency droop, Electrical

Researchers in Taiwan Have Produced Zinc Oxide/Gallium Nitride Nano

May 29, 2014

Researchers in Taiwan have produced zinc oxide/gallium nitride (ZnO/GaN) nano-rod light-emitting diodes [Ya-Ju Lee et al, APL Mater. vol2, p056101, 2014]. The researchers avoided complicated polymer processing by using a shadowing effect to ...

Tags: LED Fabrication, Zinc Oxide

Osram Opto Semiconductors GmbH Plans to Keep Pace with Constant Market Growth

Feb 7, 2014

Osram Opto Semiconductors GmbH of Regensburg, Germany says that, to keep pace with constant market growth, it is switching its fabrication of red, orange and yellow light-emitting diodes to 6-inch wafers. The firm is therefore extending the ...

Tags: LED Fabrication, LED Chip

Soraa Announced That It Will Open a New Semiconductor Fabrication Plant in Buffalo

Dec 4, 2013

Soraa, the world leader in the development of gallium nitride on gallium nitride (GaN on GaN™) LED technology, announced that it will open a new semiconductor fabrication plant in Buffalo, New York. In partnership with the State of ...

Tags: LED, lights

Soraa Currently Operates an LED Fabrication Plant in Fremont, California

Nov 26, 2013

Soraa, the world leader in the development of gallium nitride on gallium nitride (GaN on GaN™) LED technology, announced today that it will open a new semiconductor fabrication plant in Buffalo, New York. In partnership with the State ...

Tags: Soraa, GaN LED

Tsing Hua University Has Developed a Method to Improve The Performance

Oct 9, 2013

Taiwan’s National Tsing Hua University has developed a method to improve the performance of zinc oxide (ZnO) transparent conductive oxide (TCO) as an electrode for short-wavelength nitride semiconductor light-emitting diodes (LEDs) ...

Tags: zinc oxide, LEDs

Jimei University Used InGaN P-Type Contacts to Increase Light Output Power by 45%

Sep 16, 2013

Jimei University in China has used indium gallium nitride (InGaN) p-type contacts to increase light output power by 45% over a reference device [Wang Min-Shuai and Huang Xiao-Jing, Chin. Phys. B, vol. 22, p086803, 2013]. The researchers ...

Tags: InGaN LEDs MOCVD, LED, Electrical, Electronics

Northwestern University's Center for Quantum Devices Developed a SP Enhancement Technique

Jun 14, 2013

Northwestern University's Center for Quantum Devices has developed a suface-plasmon (SP) enhancement technique for ultraviolet (UV) light-emitting diodes (LEDs) produced on silicon substrates [Chu-Young Cho et al, Appl. Phys. Lett., vol102, ...

Tags: UV-LEDs, Electrical, Electronics

Silicon Carbide Buffer Layer Improve Gallium Nitride Growth for Gan-on-Si LED Fabrication

May 31, 2013

An Australian-UK consortium is offering a epitaxial silicon carbide buffer layer for 300mm silicon wafers, claiming it will improve gallium nitride growth for GaN-on-Si LED fabrication. The buffer is the result of over 10 years research ...

Tags: SiC-on-Si, Lighting

NEWLED Is Aiming to Develop a New Generation of White Light-Emitting LED Lights

Mar 18, 2013

The 11.8m Euro pan-European project NEWLED (‘Nanostructured Efficient White LEDs based on short-period superlattices and quantum dots’) is aiming to develop a new generation of 50-60% energy-efficient white light-emitting LED ...

Tags: LED lighting, LEDlighting

The Way The World Is Lit up Could Be Revolutionized

Mar 13, 2013

The way the world is lit up could be revolutionized by a new European-wide research project being led by the University of Dundee. The 11.8 million Euros NEWLED project aims to develop a new generation of white light-emitting LED lights, ...

Tags: LED, Electrical, Electronics, Lights, Lighting

LED Fabrication

Related Products