In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices
Energized by demand from hybrid and electric vehicles, power supplies and photovoltaic (PV) inverters, the emerging global market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors will rise from just $210m in 2015 to ...
Tags: Semiconductor Market, GaN, SiC
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced publication of the second ...
Tags: EPC, E-mode GaN FETs
ON Semiconductor (Nasdaq: ON), driving energy efficiency innovations, has introduced an array of new AEC-Q100-compliantintegrated circuits (ICs) optimized for implementation into next generation automobile designs. The NBA3N200/1/6S ...
Diodes Incorporated, a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today introduced the AL1678 family of LED Drivers. ...
Tags: Diodes, LED Lamps, LED drivers
Research reported in Applied Physics Express (APEX) by Tohru Oka and colleagues at the Research and Development Headquarters for TOYODA GOSEI Co., Ltd in Japan describe the development of ‘vertically orientated’ GaN-based ...
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has launched its Half-Bridge Evaluation Board, which demonstrates ...
Tags: GaN Transistor Circuit, power switching semiconductors
Leading U.S. LED manufacturer Cree announced earlier this month, it will be rebranding its power and RF business as Wolfspeed. In an exclusive interview with LEDinside analyst and assistant manager Joanne Wu, Cree co-founder and CTO John ...
Tags: Cree, Wolfspeed, RF and power business, Market Branding
Specialty foundry TowerJazz (which has fabrication plants at Tower Semiconductor Ltd in Migdal Haemek, Israel, and at its subsidiaries Jazz Semiconductor Inc in Newport Beach, CA, USA and TowerJazz Japan Ltd) together with analog foundry ...
Tags: Panasonic, CMOS, Semiconductor, wireless communication, automotive radar
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is displaying its new GS66540C 650V 100A high-current GaN power ...
In booth 1 (level 0) at the 17th Conference on Power Electronics and Applications (EPE'15 - ECCE Europe) hosted by CERN in Geneva, Swizerland (8–10 September), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium ...
Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors
According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...
Tags: SiC Market, power electronics
Global developer of motor and motion control technologies Trinamic Motion Control has announced its latest single-axis stepper motor control and driver IC. The TMC2100, with integrated MOSFETs to drive RMS motor current to 1.2A, is ...
Tags: auto accessories, motorcycle parts, driver IC, motor control
Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...