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Mitsubishi Electric Corp
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Mitsubishi Electric Launching 25Gbps EML Can Module for 5G Mobile Base Stations
Sep 7, 2018At the 20th China International Optoelectronic Exposition (CIOE 2018) in Shenzhen, China (5-8 September), Tokyo-based Mitsubishi Electric Corp has launched the ML760B54, a 25Gbps electroabsorption modulated laser (EML) CAN module (to be ...
Tags: Mitsubishi Electric
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Mitsubishi Electric Us Inc to Take Over Power Device Sales Business From Powerex
Nov 9, 2017Tokyo-based Mitsubishi Electric Corp has agreed to acquire the Mitsubishi Electric power device sales business currently handled by Powerex Inc of Youngwood, PA, USA (a 50:50 joint venture between Mitsubishi Electric and General Electric), ...
Tags: Mitsubishi Electric, Power Device
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Mitsubishi Electric Launching Ka-Band GaN-Hemt Mmic to Downsize Satellite Earth-Station Power Transmitters
Oct 10, 2017Following development that was partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO), Tokyo-based Mitsubishi Electric Corp is to launch the MGFG5H3001, a Ka-band (26–40GHz) 8W ...
Tags: Power Transmitters, Mitsubishi
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Mitsubishi Electric Develops SiC Mosfet with Record Power Efficiency for 1200V-Class Power Device
Sep 25, 2017At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) in Washington DC (17-22 September), Tokyo-based Mitsubishi Electric Corp unveiled a silicon carbide (SiC) metal-oxide-semiconductor field-effect ...
Tags: Power Device, Mitsubishi, SiC Mosfet
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Mitsubishi Electric and Nanosemi to Demo Ultra-Wide-Band Linearized Doherty Amplifier for Next-GeN Lte Base Stations
May 24, 2017In booth 1827 at the IEEE MTT-S International Microwave Symposium (IMS2017) in Honolulu, Hawaii (6-8 June), Mitsubishi Electric US Inc of Cypress, CA is presenting a hands-on mini lab showcasing its high-efficiency, wide-band gallium ...
Tags: Mitsubishi, Electric
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Mitsubishi Electric Expanding Ku-Band GaN HEMT Range to 70W and 100W to Shrink Satellite Earth Stations
Sep 29, 2016Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) to include models operating at frequencies of 13.75–14.5GHz with saturated output power of 100W (50.0dBm) ...
Tags: Mitsubishi Electric, GaN HEMTs
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Mitsubishi Electric Sampling 220w GaN-HEMT for 2.6ghz-Band 4g Base Transceiver Stations
Sep 6, 2016Tokyo-based Mitsubishi Electric Corp has developed a 220W-output gallium nitride high-electron-mobility transistor (GaN-HEMT) with what is claimed to be world-leading drain efficiency of 74% (in load-pull measurements) for 2.6GHz-band base ...
Tags: Mitsubishi Electric, GaN-HEMT
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Mitsubishi Electric Launches Super-Mini Full-Sic Dipipm for Air Conditioners
Aug 19, 2016Tokyo-based Mitsubishi Electric Corp has launched the new PSF15S92F6 15A/600V transfer-mold power semiconductor model in its lineup of super-mini dual-in-line package intelligent power modules (DIPIPM), with embedded silicon carbide ...
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RF Power Semiconductor Market to Grow at 15.4% CAGR, Almost Tripling From $10.57bn in 2015 to $31.26bn in 2022
Jun 23, 2016The RF power semiconductor market will grow from $10.57bn in 2015 to $31.26bn in 2022, rising at a compound annual growth rate (CAGR) of 15.4% between 2016 and 2022, forecasts the firm MarketsandMarkets. According to the report 'RF Power ...
Tags: Marketsandmarkets, CAGR
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Mitsubishi Electric Shrinks Integrated 100Gbps 40km EML-TOSA To 30% Size Of Predecessor
Mar 21, 2016Tokyo-based Mitsubishi Electric Corp says that on 1 July it will start shipping a laser-diode transmitter optical subassembly (TOSA) capable of supporting 100Gbps optical transmissions. The new FU-402REA is being displayed at the Optical ...
Tags: Mitsubishi Electric, EML TOSA
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Japanese Project Develops Microwave Heating System Using GaN Amplifier Module Heaters
Feb 3, 2016Mitsubishi Electric Corp, Tokyo Institute of Technology, Ryukoku University and Microwave Chemical Co Ltd have jointly developed a microwave heating system that uses 500W-output gallium nitride (GaN) amplifier modules as heat sources. The ...
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Mitsubishi Electric Expanding Lineup of 3.5GHz GaN HEMTs for 4G Base Transceiver Stations
Dec 24, 2015Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) for use in base transceiver stations (BTS) operating in the 3.5GHz band of fourth generation (4G) mobile ...
Tags: Mitsubishi Electric, GaN HEMT, Electronics
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Crisis-Hit Toshiba to Announce Record Losses Amid Major Restructuring Push
Dec 22, 2015Toshiba Corp. said on Saturday its group net loss for the business year ending in March will far outweigh that of the previous year's and may top its record of 398.8 billion yen (3.29 billion U.S. dollars) logged in the year through March ...
Tags: Toshiba, Record Losses
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Toshiba to Slash 8,000 Jobs in Restructuring Plans, Record Losses Expected for FY 2015
Dec 22, 2015Scandal-plagued Toshiba Corp. on Monday unveiled wholesale restructuring plans in an aggressive move to return the ailing electronics firm to profitability which will include some 7,800 jobs being slashed from its workforce. The firm ...
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Mitsubishi Uses Laytec in-Situ Monitoring to Grow Crack-Free GaN-on-Si HEMTs
Dec 3, 2015The main challenge of growing gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) on silicon substrates is the lattice mismatch between GaN and AlGaN that causes a high tensile stress and often leads to cracks. Now, by ...