NGK articles & resources on Made-in-China.com

SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics

Oct 19, 2015

When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...

Tags: Power Electronics, semiconductor, LED

GaN-on-Si Technology Has Emerged Naturally as an Alternative to GaN-on-Sapphire

Apr 24, 2014

GaN-on-Si technology has emerged naturally as an alternative to GaN-on-sapphire — the mainstream technology for LED applications. But today, despite potential cost benefits, the mass adoption of GaN-on-Si technology for LED ...

Tags: GaN-on-Si, Electrical, Electronics

TNK BP Holding BOD Failed to Hold a Sitting November 23rd 2012

Nov 30, 2012

TNK BP Holding BOD failed to hold a sitting November 23rd 2012 due to the lack of the quorum. The agenda covered approval of several deals and gas shipment contract with Orenburgneft. TNK-BP (TIN 7225004092) was formed in 2004. It is ...

Tags: TNK BP Holding, NGK, AAP, oil output

NGK Insulators Has Announced It Has Developed Gallium Nitride Wafers

Nov 28, 2012

NGK Insulators, Ltd. has announced it has developed gallium nitride (GaN) wafers that double luminous efficiency of a LED light source compared to conventional materials. With the assistance of a research institute outside the Company, a ...

Tags: NGK, GaN wafer, LEDs

The GaN Wafers Have a Colorless Transparency

Nov 28, 2012

The GaN wafers developed by NGK feature low defect density across the entire 2-inch diameter of the wafer surface and have a colorless transparency. NGK achieved this through proprietary improvements to liquid phase epitaxial technology for ...

Tags: GaN wafers, green LED chips, LED

NGK Has Developed Gallium Nitride (GaN) Wafers Over Previous Models

Nov 2, 2012

NGK Insulators Ltd of Nagoya, Japan has developed gallium nitride (GaN) wafers that significantly reduce defects and approximately double the luminous efficiency of green light-emitting diodes (LEDs) over previous models. The GaN wafers ...

Tags: LED, GaN

NGK Insulators Claims Has to Have Developed Gallium Nitride Wafers

May 9, 2012

NGK Insulators, Ltd. claims has to have developed gallium nitride (GaN) wafers that double luminous efficiency of a LED light source compared to conventional materials. NGK says that its GaN wafers created with its original liquid phase ...

Tags: wafer

NGK Claims Has to Have Developed GaN Wafers That Double LED Light Source Efficiency

May 9, 2012

NGK Insulators, Ltd. claims has to have developed gallium nitride (GaN) wafers that double luminous efficiency of a LED light source compared to conventional materials. NGK says that its GaN wafers created with its original liquid phase ...

Tags: Market View, wafer

NGK Insulators Ltd Has Made a Breakthrough on LED Luminous Efficiency with a GaN Wafer

May 4, 2012

Recently, NGK Insulators Ltd has made a breakthrough on LED Luminous Efficiency with a gallium nitride (GaN) wafer. The company claims that the new GaN wafer can realize twice as high a luminous efficiency as existing LED light sources ...

Tags: Market View, wafer

Japanese Based Company NGK Insulators Has Released New Wafer Products

Dec 13, 2011

Japanese based company NGK Insulators has released new wafer products for electronic device applications in ultra high brightness (UHB) LEDs. It has showcased at SEMICON Japan 2011 held between December 7 through 9 at Makuhari Messe in ...

Tags: Market View, led

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