NMOSFETs

The Performance Was Enabled by ALE of Dielectric to Reduce Interface Trap Densities
Mar 28, 2013
Researchers at Purdue and Harvard universities have developed gallium arsenide (GaAs) enhancement-mode (E-mode) surface/n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with a maximum drain current of 336mA/mm, which ...

Tags: NMOSFETs, GaAs, GaAs transistor ALE