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P-Type Doping Into Gaassb Layers Achieved by Mocvd Using Si as a Dopant Fristly
Jan 22, 2015Researchers at Japan's NTT Device Technology Laboratories have used silicon (Si) doping to achieve p-type conduction in gallium arsenide antimony (GaAsSb) produced with metal-organic chemical vapor deposition (MOCVD) on indium phosphide ...