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Nitride semiconductor transistors
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HKUST Is Developing Techniques to Monolithically Integrate HEMTs
Mar 24, 2014Hong Kong University of Science and Technology (HKUST) is developing techniques to monolithically integrate high-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs) based on aluminium indium gallium nitride (AlInGaN) ...
Tags: Nitride Semiconductor, LEDs, LED regions
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Germany-Based Researchers Claim a Record on-Current
Aug 27, 2013Germany-based researchers claim a record on-current for an enhancement-mode (e-mode) gallium nitride (GaN) metal insulator semiconductor heterostructure field-effect transistor (MISHFET) on silicon (Si) substrate [Herwig Hahn et al, Jpn. J. ...
Tags: Electrical, Electronics, E-Mode
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Universities Have Jointly Developed a Self-Terminating Gate Recess Etch
Jul 15, 2013Peking and Xidian universities have jointly developed a self-terminating gate recess etch that allows them to produce aluminium gallium nitride (AlGaN) normally-off metal-oxide-semiconductor field-effect transistors (MOSFETs) with positive ...
Tags: Electrical, gate recess etch
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BAE Systems and Purdue University Developed Atomic Layer Deposited (ALD) Aluminium Oxide
May 13, 2013Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer
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GaN-Based Transistors Are Promising for Future High-Frequency/High-Power Devices
Mar 22, 2013The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a French team of researchers [A. Soltani ...
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Researchers Have Developed Gallium Nitride (GaN) Fin Field-Effect Transistors (FinFETs)
Feb 21, 2013Researchers based in South Korea and France have developed gallium nitride (GaN) fin field-effect transistors (FinFETs) with the lowest claimed subthreshold swing for nitride semiconductor metal-insulator-semiconductor FETs (MISFETs) ...
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Singapore Researchers Report "for The First Time" The DC and Microwave Characteristics
Oct 29, 2012Singapore researchers report "for the first time" the DC and microwave characteristics of submicron-gate aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on 8-inch (200mm) diameter Si(111) ...
Tags: MOCVD
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Reducing Noise at High Frequency in Nitride-on-Silicon Transistors
Aug 10, 2012Reducing noise at high frequency in nitride-on-silicon transistors France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has produced the first benchmark for low-noise gallium nitride on silicon transistors in ...
Tags: GaN/Si HEMTs MOCVD IEMN, Lights, Lighting, nitride-on-silicon transistors
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Hong Kong University Has Achieved Record Maximum Drain Currents
Jul 9, 2012Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...
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RWTH Aachen University Have Developed a New Technique to Create Insulated Gates
May 9, 2012RWTH Aachen University and Aixtron SE in Germany have developed a new technique to create aluminium oxide insulated gates for nitride semiconductor transistors[Herwig Hahn et al,Semicond.Sci.Technol.,vol27,p062001,2012].The method consists ...
Tags: Plasma oxidation, RWTH Aachen University, Aixtron SE, GaN