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P Gallium Nitride
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US Air Force Offering $13.5m Cooperative Agreement to Develop Large-Diameter SiC Substrates
Apr 6, 2016The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
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Silicon Carbide Chip Business Was Worth More Than $133m
Aug 4, 2015According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...
Tags: SiC Market, power electronics
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The Transmitter Is Used Routinely to Return Mission Imagery to The Ground
Jun 29, 2015What is decribed as the first European-made device based on gallium nitride (GaN) to be sent into space has completed its second year of operations. Hosted by the European Space Agency (ESA) on its Earth-observing Proba-V mini-satellite in ...
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EPA Is Used to Alter The Hydrogen Content in P-Type GaN Layers with a View
Jun 16, 2015Researchers in South Korea have used electrochemical potentiostatic activation (EPA) to alter the hydrogen content in p-type gallium nitride (GaN) layers with a view to improved performance of light-emitting diodes (LEDs) [June Key Lee et ...
Tags: GaN layers, P-Gallium Nitride
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GaN-on-Sapphire Is The Existing Mainstream Technology for LED Manufacturing
Mar 24, 2014Gallium nitride (GaN)-on-sapphire is the existing mainstream technology for LED manufacturing, but GaN-on-silicon technology has naturally appeared as an alternative to sapphire in order to reduce cost. However, a cost simulation by market ...
Tags: GaN-on-Si, GaN power electronics, LED
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The PLB010350 LED Is Manufactured on Its GaN-on-Si Manufacturing Platform
Jul 3, 2013Gallium-nitride-on-silicon architecture inches closer to sapphire-based LED performance levels but a significant gap remains. Plessey Semiconductors has announced the PLB010350 LED that it is manufactured on its gallium-nitride-on-silicon ...
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M/A-COM Is Showcasing Its Broad Portfolio of New Products
Jun 3, 2013In booth #930 at the IEEE MTT International Microwave Symposium (IMS) tradeshow in Seattle, WA, USA (4-6 June), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies) is ...
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Gallium Nitride Has Been Described as "The Most Important Semiconductor Since Silicon"
Apr 5, 2013Gallium nitride has been described as “the most important semiconductor since silicon” and is used in energy-saving LED lighting. A new £1million (or US$1,530,700) growth facility will allow University of Cambridge ...
Tags: GaN LEDs, Electrical, lighting
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Patented Technology for 150mm GaN-on-Si Substrates of Azzurro Semiconductors AG
Oct 11, 2012Gallium nitride on silicon (GaN-on-Si)-based LEDs have been fabricated using high‐brightness LED structures of Epistar Corp of Taipei, Taiwan and the patented technology for 150mm GaN-on-Si substrates of Azzurro Semiconductors AG of ...
Tags: GaN-on-Si
