P Gan Gate

Forward-Bias Gate Breakdown in HEMTs with Enhancement-Mode P-Gan Gate
Sep 14, 2015
Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...

Tags: P-Gan Gate, Electronics